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66001A DSPIC33 UM5052DA 27C100 M3018 BC857 3223S2 AO8808A
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  7.5amperes Datasheet PDF File

For 7.5amperes Found Datasheets File :: 14911    Search Time::4.25ms    
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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BVR
OCR Text ...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5512 Rev C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-R...
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5020SVFR APT5020

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020SVFR APT5020
OCR Text ...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5569 Rev B 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-R...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

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    APT5020 APT5020SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020 APT5020SVR
OCR Text ...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5522 Rev B 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-R...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

File Size 61.79K  /  4 Page

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    APT5022AVR

ADPOW[Advanced Power Technology]
Part No. APT5022AVR
OCR Text ...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5803 Rev A 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-R...
Description POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.67K  /  4 Page

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    APT5024AVR

ADPOW[Advanced Power Technology]
Part No. APT5024AVR
OCR Text ...3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5 74 1.3 415 6.6 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont...
Description POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.55K  /  4 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on D...5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recov...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ...3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5.00mH, R = 25, Peak I = 22A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5025BN APT5030BN

ADPOW[Advanced Power Technology]
Part No. APT5025BN APT5030BN
OCR Text ...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-5007 Rev C 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ...
Description POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HVR
OCR Text ...3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5 74 1.3 415 6.6 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont...
Description POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ...2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 1...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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