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  64-bit 133mhz Datasheet PDF File

For 64-bit 133mhz Found Datasheets File :: 1273    Search Time::3.984ms    
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    S3C2510A S3C2510

Samsung Electronics Inc
Samsung semiconductor
Part No. S3C2510A S3C2510
OCR Text ... timers, 30-bit watchdog timer, 64 programmable I/O ports, and four PLLs for clock generation. The S3C2510A is developed using an ARM940T core, 0.18um CMOS standard cells and a memory compiler. Its powerful, elegant and fully static design ...
Description IC,MICROPROCESSOR,32-BIT,CMOS,BGA,416PIN,PLASTIC
16/32-bit RISC micro-controller is a cost-effective, high-performance micro-controller solution for Ethernet-based systems, for example

File Size 408.95K  /  46 Page

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    HY57V651620BTC-10S HY57V651620BTC-10SNBSP HY57V651620BTC-8 HY57V651620BTC-75 HY57V651620BTC-7 HY57V651620BTC-10

 Hynix Semiconductor 
Part No. HY57V651620BTC-10S HY57V651620BTC-10SNBSP HY57V651620BTC-8 HY57V651620BTC-75 HY57V651620BTC-7 HY57V651620BTC-10
OCR Text ... 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 70 702 20 42 20 14 1 0 1 4 2 0 1 3 2 1 1 Max 120K 64 Min 65 65 20 45 20 15 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 68 68 20 48 20 16 1 0 2 5 2 0 2 3 2 1 1 Max 100K 64 Min 70 70 20 50 20 20 1 0 1 3 2 0 2 ...
Description  x16 SDRAM 
From old datasheet system

File Size 141.08K  /  12 Page

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    HYNIX
Part No. HY5DU56162 HY5DU561622CT
OCR Text ...5 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 x16 VSS DQ1...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description 256M-P DDR SDRAM

File Size 372.02K  /  35 Page

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    ICSI[Integrated Circuit Solution Inc]
Part No. IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S16400-6BG IC42S16400-6BIG IC42S16400-6T IC42S16400-6TG IC42S16400-6TI IC42S16400-6TIG IC42S16400-7BG IC42S16400-7BIG IC42S16400-7T IC42S16400-7TG
OCR Text 64-MBIT) SDRAM Revision History Revision No 0A 0B 0C History Initial Draft Revise DC OPERATING CONDITIONS 1. add -6ns speed grade 2...bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank),...
Description DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM

File Size 1,088.26K  /  68 Page

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    K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H-RBE K4S641633H-RE K4S641633H-RL1L0
OCR Text ...y=3 CAS latency=2 CAS latency=1 64 100 69 2 tRDL + tRP 1 1 1 2 1 0 84 Symbol -75 tRRD(min) tRCD(min) tRP(min) tRAS(min) 15 19 19 45 -1H 19 1...Bit Reserved Reserved 0 Setting for Normal MRS A3 0 1 Burst Type Type Sequential Interleave Mode Sel...
Description 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM

File Size 110.06K  /  12 Page

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    HYNIX[Hynix Semiconductor]
Part No. HY5DU121622C HY5DU12822CTP-X HY5DU121622CTP-X HY5DU121622CLTP HY5DU121622CLTP-X HY5DU12422C HY5DU12422CLTP HY5DU12822CTP HY5DU121622CTP HY5DU12422CLTP-X HY5DU12422CTP HY5DU12422CTP-X HY5DU12822C HY5DU12822CLTP HY5DU12822CLTP-X
OCR Text ...5 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 x16 VSS DQ1...bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. ...
Description 512Mb DDR SDRAM

File Size 242.16K  /  31 Page

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    K4G323222A K4G323222A-QC_L70 K4G323222A-PC_L45 K4G323222A-PC_L70 K4G323222A-QC_L7C K4G323222A-PC_L50 K4G323222A-PC_L60 K

SAMSUNG[Samsung semiconductor]
Part No. K4G323222A K4G323222A-QC_L70 K4G323222A-PC_L45 K4G323222A-PC_L70 K4G323222A-QC_L7C K4G323222A-PC_L50 K4G323222A-PC_L60 K4G323222A-PC_L7C K4G323222A-QC_L45 K4G323222A-QC_L60 K4G323222A-QC_L50
OCR Text ...5 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 Pin QFP Forward Type 20 x 14 mm2 0.65mm pin Pitch 50 49 ...Bit Type Mode Register Set Vendor Use Only A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0...
Description 32Mbit SGRAM

File Size 1,124.17K  /  49 Page

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    K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F-F1L K4S283233F-F60 K4S283233F-F75 K4S283233F-FE K4S283233F-FHE K4S2832

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F-F1L K4S283233F-F60 K4S283233F-F75 K4S283233F-FE K4S283233F-FHE K4S283233F-G K4S283233F-L K4S283233F-N K4S283233F-FF600
OCR Text ... CAS latency=2 CAS latency=1 60 64 2 tRDL + tRP 1 1 1 2 1 0 100 69 Symbol -60 tRRD(min) tRCD(min) tRP(min) tRAS(min) 12 18 18 42 -75 15 19 1...Bit Reserved Reserved 0 Setting for Normal MRS A3 0 1 Burst Type Type Sequential Interleave Mode Sel...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM

File Size 138.69K  /  12 Page

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