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SGS Thomson Microelectronics
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| Part No. |
AN527
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| OCR Text |
...his frequency is between around 600v and 1.2kv. 3.1.2 steady-state operation once the tube ionised, as there is effectively a short circuit ...120v rms, load = 4 x 32w i b (1a / div) figure 6. steady state waveforms of the current fed ballast ... |
| Description |
ELECTRONIC FLOURESCENT LAMP BALLAST
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| File Size |
66.34K /
10 Page |
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PROTEC[Protek Devices]
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| Part No. |
RV120-30
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| OCR Text |
...Wave with 1,500A Line to Ground 600V - 8/20s Wave with 5,000A Line to Ground 1,000V - 8/20s Wave with 10,000A Line to Ground 1,500V - 8/20s Rated Peak Pulse Current: 36kA, Line to Ground - 8/20s Power Consumption: < 60mW Operating Temp... |
| Description |
120V RV SURGE SUPPRESSOR
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| File Size |
99.05K /
1 Page |
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it Online |
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意法半导
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| Part No. |
STEVAL-ILL016V1
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| OCR Text |
...avg = 400ma q1: peak = 470v use 600v xstr allow 1w, no sink - rmax = 3.19 ohms stp5nk60zfp rdson = 1.6 ohms c11 1uf 63v l3 33uh 1.6a c12 1uf 63v for 2 strings of 8 leds 1 3 2 d7 stps10150ct 0.6w @ 120v 90deg cond l4 panasonic elf-17n002a po... |
| Description |
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| File Size |
155.90K /
4 Page |
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it Online |
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Bookly
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| Part No. |
BM01N60
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| OCR Text |
...60
Features
* * * * * * 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching...120V
10
Ciss
150
VDS = 300V VDS = 480V
VGS , Gate-Source Voltage [V]
8
Capacitance ... |
| Description |
MOSFET
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| File Size |
814.96K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SGB15N60HS
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| OCR Text |
...ve 30 khz ? npt-technology for 600v applications offers: - parallel switching capability - moderate e off increase with temperature - very...120v c, capacitance 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collec... |
| Description |
IGBTs & DuoPacks - 15A 600V TO263 IGBT
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| File Size |
384.79K /
11 Page |
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it Online |
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Infineon
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| Part No. |
SKB15N60HS
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| OCR Text |
...ve 30 khz ? npt-technology for 600v applications offers: - parallel switching capability - moderate e off increase with temperature - very...120v c, capacitance 0v 10v 20v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collec... |
| Description |
IGBTs & DuoPacks - 15A 600V TO263 IGBT Diode
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| File Size |
414.45K /
14 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SKW30N60
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| OCR Text |
... inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...120v c , capacitance 0v 10v 20v 30v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , co... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
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| File Size |
272.38K /
13 Page |
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it Online |
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