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  30.009 Datasheet PDF File

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    TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
Part No. TGF2021-04
OCR Text ...ma) ? chip dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) primary applications ? point-to-point radio ? high-re...009 0.009 0.009 0.009 0.010 0.010 nh lg 0.089 0.089 0.089 0.089 0.089 0.089 nh ld 0.120 0.120 0.120 ...
Description DC - 12 GHz Discrete power pHEMT 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER

File Size 125.78K  /  8 Page

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    PTF10107

Ericsson Microelectronics
Part No. PTF10107
OCR Text ... (dB) 12 50 Efficiency (%) 40 - 30 5 -15 20 10 -25 Return Loss (dB) 2 1925 1950 1975 0 -35 2000 Broadband Test Fixture Performance Effic...009 0.010 0.012 0.013 0.012 0.011 0.009 0.008 0.006 0.004 0.004 0.004 0.005 0.006 0.008 0.009 0.011 ...
Description 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

File Size 82.10K  /  6 Page

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    SN54LS253 SN54LS253J SN74LS253N SN74LS253D

MOTOROLA[Motorola, Inc]
Part No. SN54LS253 SN54LS253J SN74LS253N SN74LS253D
OCR Text ...1) Power Supply Current 14 mA - 30 - 0.4 - 130 12 0.35 0.5 20 - 20 20 V A A A mA mA mA mA 2.4 3.1 0.25 0.4 V V 2.4 - 0.65 3.4 0.8 - 1.5 V V ...009 0.009 7 0.244 0.019 Case 648-08 N Suffix 16-Pin Plastic -A16 9 NOTES: 1. DIMENSIONING AND ...
Description DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS

File Size 166.06K  /  5 Page

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    FMM5807X

Eudyna Devices Inc
Part No. FMM5807X
OCR Text ...n. Limits Typ. Max. 21 - 27 29* 30** 14 700 20 -12 -8 19 950 Unit GHz dBm dB mA % dB dB Note: RF parameter sample size 10pcs./wafer. Crit...009 .008 .009 .007 .004 .003 .009 S22 ANG MAG .702 .617 .510 .381 .230 .082 .100 .215 .309 .380 ...
Description 21-27GHz Power Amplifier MMIC

File Size 862.46K  /  4 Page

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    MJE13003-E MJE13003G-E-F-T92-B MJE13003G-E-E-T6S-K MJE13003G-E-A-T92-K

Unisonic Technologies
Part No. MJE13003-E MJE13003G-E-F-T92-B MJE13003G-E-E-T6S-K MJE13003G-E-A-T92-K
OCR Text ... 16 15 ~ 21 20 ~ 26 25 ~ 31 30 ~ 36 35 ~ 40 mje13003-e npn epitaxial silicon transistor unisonic te...009.c ? application information table 1.test conditions for dynamic performance reverse bias s...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
   HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 284.24K  /  8 Page

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    CGS505U020X5L CGS984U7R5X5L CG103U050X4C CG152U050R2C CG152U050R3C CG153U050W4C CG1652U050X5L CG202U050R4C CG223U050X4C

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Part No. CGS505U020X5L CGS984U7R5X5L CG103U050X4C CG152U050R2C CG152U050R3C CG153U050W4C CG1652U050X5L CG202U050R4C CG223U050X4C CG252U050U3C CG292U050R3C CG332U050V3C CG333U050X5L CG432U050R4C CG452U050V4C CG502U050U3C CG801U050R2C CGS CGS101T450R2C CGS102T200R4C CGS102T200V2C CGS102T250R5L CGS102T450R5L CGS102T450V3L CGS102T450W4C CGS103T250X4L CGS103T250X5L CGS103U016R2C CGS103U016R3C CGS103U025R3C CGS103U035V2C CGS103U050R4C CGS103U050V2C CGS103U075R3C CGS103U075V3C CGS103U075V4C CGS103U100W4C CGS103U150V5L CGS103U150X5C CGS104U016X5C CGS104U025U4C CGS104U025V5L CGS104U025X3L CGS104U030X5L CGS104U050X8L CGS104U075X5L CGS105U6R3X5L CGS105U7R5X5R CGS105UGX8L6PD CGS105UGX8L6PH CGS106U020X5R CGS112T450U4C CGS112T450X4C CGS112U150R2C CGS112U150R4C CGS113T400X8L CGS113U040V3C CGS113U150W4C CGS114U016W4C CGS114U025X5C CGS114U025X5L CGS114U040V5L CGS114U075X5R CGS115U6R3X5R CGS122T200R2L CGS122T250R3C CGS122T250V3C CGS122U100R3C CGS123T200W5L CGS123T250X5C CGS123U016R2C CGS123U025R3C CGS123U025V3C CGS123U030R4C CGS123U035R4C CGS123U040R4C CGS123U040V2C CGS123U050R5L CGS123U063R3C CGS123U075R4C CGS123U075V4C CGS123U100V3C CGS123U150V5L CGS123U150X5L CGS124U016V4C CGS124U025V4C CGS124U025X4C CGS1
OCR Text ...1.25 1000 Hz 1.25 1.40 10 kHz 1.30 1.50 DC Leakage Current: I = .006 CV Not to exceed 6.0 mA max. after 5 minutes C = Capacitance in ...009 0.010 0.007 0.007 0.005 0.006 0.005 0.005 0.004 0.030 0.023 0.019 0.014 0.013 0.012 0.010 0.010 ...
Description    Computer Grade Aluminum Electrolytic Capacitor

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    STD60NH03L-1 STD60NH03L STD60NH03LT4

ST Microelectronics
STMicroelectronics
Part No. STD60NH03L-1 STD60NH03L STD60NH03LT4
OCR Text 30 V RDS(on) < 0.009 ID 60 A s TYPICAL RDS(on) = 0.0075 @ 10 V TYPICAL RDS(on) = 0.009 @ 5 V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251)...
Description N-CHANNEL 30V - 0.0075 OHM - 60A DPAK/IPAK STRIPFET III POWER MOSFET
N-CHANNEL 30V - 0.0075 W - 60A DPAK/IPAK STripFET III POWER MOSFET

File Size 533.03K  /  12 Page

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    STK8000609 STK800 K800

STMICROELECTRONICS[STMicroelectronics]
Part No. STK8000609 STK800 K800
OCR Text ... TC = 25C Derating factor Value 30 16 18 20 12.5 80 5.2 0.0416 -55 to 150 Unit V V V A A A W W/C C Tj Tstg Operating junction temper...009 0.008 0.236 0.226 0.197 0.187 0.009 0.020 0.012 0.020 0.166 0.009 0.169 0.135 0.009 0.002 0.006 ...
Description N-channel 30V - 0.006ohm - 20A - PolarPAK STripFET Power MOSFET

File Size 245.98K  /  12 Page

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    UPC2710T UPC2713T

NEC[NEC]
Part No. UPC2710T UPC2713T
OCR Text ...dB dB dB/C C/W 3 9 34 11 MIN 16 30 0.7 UPC2710T T06 TYP 22 33 1.0 0.8 13.5 7.5 3.5 6 12 39 -0.006 200 5 10 6 35 4 MAX 29 36.5 MIN 9 26 0.9 U...009 0.009 0.012 0.013 0.013 0.013 0.013 0.014 0.014 0.015 0.016 0.016 0.017 S12 ANG 17.1 19.8 22.5 2...
Description 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

File Size 70.00K  /  6 Page

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    D1009UK

TT electronics Semelab, Ltd.
Seme LAB
Part No. D1009UK
OCR Text ...z 15 Pout Drain Efficiency 30 20 10 0 20 V ds = 28V Idq = 2A f =400MHz 15 Pout Gain 11 10 9 8 20 Figure 1 - Power Output and...009 0.009 0.008 0.007 0.007 0.006 0.006 0.006 0.005 0.005 0.005 0.005 0.006 0.006 0.006 0.007 0.007 ...
Description METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 49.90K  /  5 Page

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