25.40mm pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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25.40mm Datasheet PDF File

For 25.40mm Found Datasheets File :: 2016 Search Time::1.797ms
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				INFINEON[Infineon Technologies AG]
Part No.	IPB07N03L IPP07N03L
OCR Text	...03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC = 25C ,1) Symbol ID Value ...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	80 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS Buck converter series OptiMOS Buck converter series OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 6.2mOhm, 80A, LL
File Size	166.16K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPD04N03L
OCR Text	...4,5 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current2) TC=100C Symbol ID Value 100 100...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle 的OptiMOS降压转换器系 OptiMOS Buck converter series OptiMOS Power MOSFET, 30V, DPAK (5-Pin), RDSon = 4.2mOhm, 100A, LL
File Size	387.97K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPD06N03L
OCR Text	...03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC =25C1) Symbol ID Value Un...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	OptiMOS Buck converter series OptiMOS Buck converter series OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LL
File Size	157.77K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IPD07N03L IPU07N03L
OCR Text	...03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC=25C Symbol ID Value Unit ...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LL OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.8mOhm, 30A, LL OptiMOS Buck converter series OptiMOS Buck converter series 的OptiMOS降压转换器系
File Size	156.88K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SPB08P06P SPP08P06P SPB08P06PSMD
OCR Text	...233 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A I...40mm40mm1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description	SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30 Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
File Size	96.10K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD08N10 SPU08N10
OCR Text	...ube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value 8.4 5.4 33.6 30 4 6 20 4...40mm40mm1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PC...
Description	SIPMOS Power Transistor
File Size	120.56K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD08P06P SPU08P06P
OCR Text	...154 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A I...40mm40mm1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description	Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30 SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
File Size	113.11K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BAS16S Q62702-A1241
OCR Text	...= 70 V Reverse current VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C AC characteristics Diode capacitance - - 30 50 CD t rr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, ...
Description	From old datasheet system Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)
File Size	62.93K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q62702-A1160 Q62702-A1161 BAT6404W Q62702-A1162 Q62702-A1159
OCR Text	...ctrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 2 200 Unit IR IR VF - A VR = 30 V Reverse current VR = 30 V, TA = 85 C Forward v...
Description	Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring) From old datasheet system
File Size	68.69K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A3470
OCR Text	...ctrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 2 200 mV 320 385 440 570 350 430 520 750 A Unit IR IR VF - VR = 30 V Reverse current VR...
Description	Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE Ten Output Zero Delay Buffer INVERTER 5V-INPUT 900V-OUTPUT From old datasheet system
File Size	32.83K / 3 Page	View it Online	Download Datasheet

For 25.40mm Found Datasheets File :: 2016 Search Time::1.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |