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200 150w Datasheet PDF File

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				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ91A C67078-S1342-A3
OCR Text	... VGS 12 10 350 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 C 160 0 20 40 60 80 100 130 4 8 0,2 VDS max 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 710 V 680 V(BR)DSS 660 640 620 600 ...
Description	Power MOSFET SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) From old datasheet system
File Size	183.21K / 9 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ91 C67078-S1342-A2
OCR Text	... VGS 12 10 350 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 C 160 0 20 40 60 80 100 130 4 8 0,2 VDS max 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 710 V 680 V(BR)DSS 660 640 620 600 ...
Description	From old datasheet system SIPMOS Power Transistor(N Channel)
File Size	120.89K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ305 C67078-S3134-A2
OCR Text	...2000 220 130 - S pF 2650 330 200 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 ...150w kj ihg f e VGS [V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c ...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) From old datasheet system
File Size	70.63K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BUZ61A
OCR Text	...00 10 350 0,2 VDS max 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 C 160 0 20 40 60 80 nC 110 4 8 0,8 VDS max VGS 12 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 3...
Description	SIPMOS Power Transistor
File Size	145.62K / 9 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BUZ61
OCR Text	... 10 350 0,2 VDS max 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 C 160 0 20 40 60 80 nC 110 4 8 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
File Size	192.47K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BUZ61
OCR Text	...00 10 350 0,2 VDS max 300 250 6 200 150 100 2 50 0 20 0 40 60 80 100 120 C 160 0 20 40 60 80 nC 110 4 8 0,8 VDS max VGS 12 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 3...
Description	SIPMOS Power Transistor
File Size	147.91K / 9 Page	View it Online	Download Datasheet

				Nikkohm Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers N.A. ETC[ETC]
Part No.	IRF100 IRF400 IRF250 IRF150 IRF200 IRN50S IRN100 IRN100S1R0J IRN150 IRN150C1K0F IRN50 IRF300 IRF200S100RJ IRF500 IRF500C10RJ
OCR Text	...a. Weight(g) 100 160 220 155 200 245 290 335 430 525 POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ...150w 100W 150w 200W 250W 300W 400W 500W +/-0.5(D) +/-1.0(F) +/-2.0(G) +/-5.0(J) +/-10(K) Lead ...
Description	GT 3C 3#16S PIN PLUG 50W to 500W High Power Wire Wound Resistirs Flat Shaped Aluminum Housed (IRF150 - IRF500) 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
File Size	80.38K / 2 Page	View it Online	Download Datasheet

				TRIPATH[Tripath Technology Inc.] ETC
Part No.	TA3020
OCR Text	... 5 10 20 50 100 200 500 Output Power (W) TA3020, Rev 2.1, 01.01 1 TECHNICAL INFORMATION Absolute Maximum R...150w/Channel, RL = 8 POUT = 10W/Channel, RL = 4 See Application / Test Circuit POUT = 10W/Channel, R...
Description	Stereo 300W (4з) Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology Stereo 300W (4) Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology
File Size	282.58K / 29 Page	View it Online	Download Datasheet

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