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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML1XX22 ML101J22 ML120G22
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| OCR Text |
...rature Conditions CW Pulse(Note 2) Ratings 100 180 2 -10 ~ +75 -40 ~ +100 mW V C C Unit
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time. This does not mean the guarantee of its... |
| Description |
FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
85.53K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2000AS
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| OCR Text |
...nt Gate Current RF Input Power
2
FPD2000AS
2W PACKAGED POWER PHEMT
*
Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp.
3
Test Con...95W * For optimum heatsinking, metal-filled through (Source) via holes should be used directly below... |
| Description |
2W PACKAGED POWER PHEMT
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| File Size |
278.08K /
7 Page |
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it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
UP-RW1220P1
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| OCR Text |
....02
(140 + 1.5 ) - 0.5 0.11 (2.815)
1.516 + 0.06 - 0.02 (38.5+ 1.5 ) - 0.5 0.984 (25)
MAX 3.997 (MAX 101.5)
3.701 + 0.06 - 0.02
...95W 120W 190W Approx. 35m 102% 100% 85% 65% 91% 82% 64% 1.35 A or smaller 13.6V to 13.8V (per 12V ce... |
| Description |
VALVE-REGULATED LEAD ACID BATTERIES
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| File Size |
538.22K /
1 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BUZ31
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| OCR Text |
2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 31
200 V
14.5 A
0.2
TO-220 AB
C...95W
l
kj
i
h
g
fa
VGS [V] 4.0
b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.... |
| Description |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL
SIPMOS Power Transistor
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| File Size |
87.42K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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