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United Monolithic Semiconductors
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Part No. |
CHA7012
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OCR Text |
...
8 9 10
11
22 21 20
19 18
17
16 15 14
13
Chip thickness = 100m +/- 10 m RF pads (1, 12) = 96 x 196m DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96m DC pads (7, 17) = 192 x 96m DC pads (11, 13) = 288 x 96m Pin n... |
Description |
X-band HBT High Power Amplifier
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File Size |
565.46K /
10 Page |
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ST Microelectronics
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Part No. |
P10NK80Z
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OCR Text |
...V, ID = 9A VGS =10V (see Figure 19)
Table 6.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on Delay Time Rise Time Test Conditions VDD=400 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 20) VDD=400 V, ID=4.5A, R... |
Description |
Search --To STP10NK80Z
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File Size |
367.86K /
14 Page |
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GTM
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Part No. |
GU15P10
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OCR Text |
19 REVISED DATE :
GU15P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-100V 210m -16A
The GU15P10 (TO-263 package)...9A VGS= 20V VDS=-100V, VGS=0 VDS=-80V, VGS=0 VGS=-10V, ID=-9A ID=-9A VDS=-80V VGS=-10V VDS=-50V ID=-... |
Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
294.80K /
4 Page |
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it Online |
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