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GTRCA22 0G471 S0512 NTE988 57680 R0340V2 33SA45J 57680
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  1800-2000 Datasheet PDF File

For 1800-2000 Found Datasheets File :: 7196    Search Time::1.766ms    
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    MIC5207 MIC5207-1.8BM5 MIC5207-2.5BM5 MIC5207-3.0BM5 MIC5207-3.3BM5 MIC5207-3.3BZ MIC5207-3.6BM5 MIC5207-3.8BM5 MIC5207-

Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Part No. MIC5207 MIC5207-1.8BM5 MIC5207-2.5BM5 MIC5207-3.0BM5 MIC5207-3.3BM5 MIC5207-3.3BZ MIC5207-3.6BM5 MIC5207-3.8BM5 MIC5207-4.0BM5 MIC5207-5.0BM5 MIC5207BM5
OCR Text ... 17 115 140 165 0.01 80 350 720 1800 75 320 0.05 260 500 0.05 0.10 0.5 0.7 60 80 175 250 280 325 300 400 1 5 130 170 650 900 1100 2000 2500 3000 Typical Max 3 4 Units % % ppm/C %/V %/V % % mV mV mV mV mV mV mV mV A A A A A A A A A A dB mA %...
Description 180mA Low-Noise LDO Regulator 3.8 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO5
Enhanced Product 4.5-V To 20-V Input 3-A Output Synchronous Pwm Switcher W/Integrated Fet 16-HTSSOP -55 to 125

File Size 77.68K  /  12 Page

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    SPW47N60C2

INFINEON[Infineon Technologies AG]
Part No. SPW47N60C2
OCR Text ... dv/dt VGS Ptot Tj , Tstg 94 1800 1 20 6 20 415 -55... +150 A V/ns V W C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =...2000 mJ A 1600 1400 EAS 10 Tj(START)=25C IAR 1200 1000 800 600 5 400 Tj(STAR...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 119.94K  /  11 Page

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    SPW47N60C3

INFINEON[Infineon Technologies AG]
Part No. SPW47N60C3
OCR Text ... D puls EAS Symbol ID 47 30 141 1800 mJ Value Unit A Page 1 2003-11-06 SPW47N60C3 Maximum Ratings Parameter Drain Source voltage s...2000 10 1 1000 di/dt(off) 0 0 2 4 6 8 10 12 14 16 RG 20 10 0 0...
Description for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 240.73K  /  13 Page

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    SPW47N60S5

INFINEON[Infineon Technologies AG]
Part No. SPW47N60S5
OCR Text ...DD = 50 V I D puls EAS 94 1800 1 20 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V ...2000 12 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPW47N60S5 mJ 1600 1400 V ...
Description for lowest Conduction Losses
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 233.05K  /  11 Page

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    SSF7N60B

http://
FAIRCHILD[Fairchild Semiconductor]
Part No. SSF7N60B
OCR Text ...0 V, f = 1.0 MHz ---1380 115 23 1800 150 30 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-O...2000 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] Ciss 1500 VDS = 480V 6 10...
Description 600V N-Channel MOSFET

File Size 654.33K  /  8 Page

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    SSH7N60 SSH7N60B

FAIRCHILD[Fairchild Semiconductor]
Part No. SSH7N60 SSH7N60B
OCR Text ...0 V, f = 1.0 MHz ---1380 115 23 1800 150 30 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-O...2000 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] Ciss 1500 VDS = 480V 6 10...
Description 600V N-Channel MOSFET

File Size 648.38K  /  8 Page

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    SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B

FAIRCHILD[Fairchild Semiconductor]
ETC
Part No. SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B
OCR Text ...0 V, f = 1.0 MHz ---1380 115 23 1800 150 30 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-O...2000 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] Ciss 1500 VDS = 480V 6 10...
Description    600V N-Channel MOSFET
From old datasheet system

File Size 653.59K  /  9 Page

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    SSP7N60 SSP7N60B SSS7N60B

FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Part No. SSP7N60 SSP7N60B SSS7N60B
OCR Text ...0 V, f = 1.0 MHz ---1380 115 23 1800 150 30 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-O...2000 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] Ciss 1500 VDS = 480V 6 10...
Description 600V N-Channel MOSFET

File Size 912.76K  /  11 Page

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