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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGT160S2BVP M6MGB160S2BVP
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| OCR Text |
...M-bits SRAM is a 262144 bytes / 131072 words APPLICATION unsynchronous SRAM fabricated by silicon-gate CMOS technology. Mobile communication...BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY & 2,097,152-B... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
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| File Size |
253.82K /
30 Page |
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Mitsubishi
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| Part No. |
M6MGB_T160S2BVP M6MGB E99003_A
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| OCR Text |
...M-bits SRAM is a 262144 bytes / 131072 words APPLICATION unsynchronous SRAM fabricated by silicon-gate CMOS technology. Mobile communication...BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY & 2,097,152-B... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
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| File Size |
255.86K /
30 Page |
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hitachi
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| Part No. |
HN27C101AP_AFP_ATTSERIES C101AP
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| OCR Text |
131072-word x 8-bit CMOS One Time Electrically Programmable ROM
Description
The HN27C101AP/AFP/ATT series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101AP/AFP/ATT, HN27C301AP /AFP ser... |
| Description |
From old datasheet system
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| File Size |
93.15K /
20 Page |
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Samsung Electronic
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| Part No. |
K9K2G0816QU0M
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| OCR Text |
...d flash array (2048 + 64)byte x 131072 y-gating cache register row address column address column address data register & s/a row address
...bit 32 words 1 block = 64 pages (64k + 2k) word i/o 0 ~ i/o 15 1 page = (1k + 32)words 1 block = (1k... |
| Description |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
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| File Size |
833.94K /
35 Page |
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hitachi
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| Part No. |
HN58V1001SERIES 58V1001
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| OCR Text |
131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM
ADE-203-314F (Z) Rev. 6.0 Apr. 30, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word x 8-bit. It has realiz... |
| Description |
From old datasheet system
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| File Size |
182.28K /
24 Page |
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SAMSUNG
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| Part No. |
K9K4G08U0M
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| OCR Text |
...
A0 - A11
(2048 + 64)Byte x 131072 Data Register & S/A Cache Register Y-Gating
Command Command Register I/O Buffers & Latches VCC VSS...bit 2K Bytes 64 Bytes
1 Page = (2K + 64)Bytes 1 Block = (2K + 64)B x 64 Pages = (128K + 4K) Bytes... |
| Description |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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| File Size |
573.66K /
35 Page |
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Asahi Kasei Microsystem... AKM[Asahi Kasei Microsystems]
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| Part No. |
AK6514CN AK6514C AK6514CF AK6510C_05 AK6510C05
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| OCR Text |
...l Description
The AK6514C is a 131072-bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6514C has 131072-bits of memory organized as 16384 registers of 8 bits each. The AK6514C c... |
| Description |
SPI bus 64Kbit Serial CMOS EEPROM
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| File Size |
126.12K /
18 Page |
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