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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
IRFS340A
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OCR Text |
...ID=4A VDS=50V,ID=4A
(4) (4)
1180 1530 pF
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=200V,ID=10A, RG=9.1
See Fig 13
VDS=320V,VGS=10V, ID=10A
(4) (5)
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
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Description |
Advanced Power Mosfet
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File Size |
221.06K /
7 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
SPI35N10 SPP35N10 SPB35N10
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OCR Text |
...nditions min.
Values typ. 23 1180 245 137 12.2 63 39 23 max. 1570 326 206 18.3 95 59 34
Unit
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Ciss Coss ... |
Description |
SIPMOS Power-Transistor
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File Size |
477.25K /
8 Page |
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ADPOW[Advanced Power Technology]
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Part No. |
APT10M11LV APT10M11LVR
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OCR Text |
...6 MIN TYP MAX UNIT
8600 3200 1180 300 95 110 16 33 46 8
10300 4480 1770 450 145 165 32 66 70 16
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN D... |
Description |
POWER MOS V 100V 100A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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File Size |
65.14K /
4 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQP50N06 FQP50N06NL
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OCR Text |
...25 V, VGS = 0 V, f = 1.0 MHz ---1180 440 65 1540 580 90 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge ... |
Description |
60V N-Channel MOSFET 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
642.29K /
8 Page |
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Price and Availability
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