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IXYS[IXYS Corporation]
IXYS, Corp.
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| Part No. |
L412 IXBF9N140 IXBF9N160
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| OCR Text |
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES... |
| Description |
High Voltage BIMOSFET
High Voltage BIMOSFET 7 A, 1600 V, N-CHANNEL IGBT
High Voltage BIMOSFET 高压BIMOSFET
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| File Size |
89.88K /
4 Page |
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it Online |
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HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
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| Part No. |
L4100
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| OCR Text |
LED
Infrared LED
L4100
Resin-potted metal package LED
Features Applications
l High reliability l High output power
l Auto focus l Optical switches l Auto control equipment
s Absolute maximum ratings (Ta=25 C)
Parameter For... |
| Description |
Resin-potted metal package LED
Resin-potted metal package LED 树脂盆栽金属封装的LED
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| File Size |
105.43K /
2 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
L408
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| OCR Text |
DSEP 8-06B
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 10 A VRRM = 600 V trr = 30 ns
A C
VRSM V 600
VRRM V
Type
TO-220 AC
C
600
DSEP 8-06B
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Sy... |
| Description |
HiPerFREDTM Epitaxial Diode with soft recovery
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| File Size |
40.45K /
2 Page |
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it Online |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
http://
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| Part No. |
L3458-03 L2204 L2204-01 L2204-03 L2402-01 L2402-02 L3458-01
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| OCR Text |
LED
Infrared LED
L2204/L2402/L3458 series
4-pin plastic package, infrared LED
Features Applications
l High radiant output power l High reliability l Long life
l Optical switches l Automatic control systems
s Absolute maximu... |
| Description |
4-pin plastic package, infrared LED
4-pin plastic package/ infrared LED
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| File Size |
132.34K /
4 Page |
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it Online |
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Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
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| Part No. |
L2SD2114KWLT1G L2SD2114KLT1 L2SD2114KVLT1 L2SD2114KVLT1G L2SD2114KWLT1
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| OCR Text |
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type NPN silicon transistor
Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA... |
| Description |
Epitaxial planar type NPN silicon transistor 外延型NPN硅平面晶体管
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| File Size |
72.39K /
4 Page |
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it Online |
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LRC[Leshan Radio Company]
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| Part No. |
L2SC5658M3T5G
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| OCR Text |
LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier NPN Silicon Transistor
This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface... |
| Description |
General Purpose Amplifier NPN Silicon Transistor
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| File Size |
67.10K /
4 Page |
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it Online |
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Price and Availability
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