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  005-02 Datasheet PDF File

For 005-02 Found Datasheets File :: 17019    Search Time::0.921ms    
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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Maximum Safe Operation Area 10 s 100 s 1 ms 600 I D (A) Channel Dissipation 400 Drain Current DC = (1 10 m sh s Op ot er ) at ion PW Operation in this area is limited by RDS(...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Operation in this area is limited by RDS(on) Mavimum Safe Operation Area 600 I D (A) Channel Dissipation 400 Drain Current DC = (1 10 m sh s Op ot er ) at ion PW ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Power vs. temperature Derating 400 *Pch (mW) 300 I D (A) 10 s 100 s 1 ms DC Operation in this area is limited by RDS(on) Channel Dissipation 200 Drain Current Op ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 *Pch (mW) 300 I D (A) 10 s 100 s 1 ms PW = 10 ms (1 shot) Power Dissipation 200 Drain Current 100 Operation in this area is limited by RDS(on) DC O pe t ra io n...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Maximum Safe Operation Area 150 I D (A) Channel Dissipation Drain Current 100 DC Op PW 10 s 100 s 1 ms er at ion 50 = (1 10 m sh s ot ) Operat...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Power vs. Temperature Derating 400 Pch (mW) I D (A) 300 10 s 100 s 1ms,10 ms DC Operation in this area is limited by RDS(on) Power Dissipation 200 Drain Current Op er at ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 25.19K  /  5 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ... 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 100 m 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area -100 -50 -30 200...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text ...ltage VGS (V) 20 0.02 0.01 0.005 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () VGS = 10 V Pulse Test 0.4 Forward Tr...
Description Silicon N-Channel MOS FET

File Size 46.51K  /  8 Page

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    4N25 4N26 4N28 4N27 4N25A

Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. 4N25 4N26 4N28 4N27 4N25A
OCR Text ...ING PLANE K G J 6 PL 0.13 (0.005) TA M M E 6 PL D 6 PL 0.13 (0.005) M M TB M A M B M STYLE 1: PIN 1. 2. 3. 4...02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 F 4 PL H C L ...
Description 6-Pin DIP Optoisolators Transistor Output

File Size 280.78K  /  6 Page

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    74LS174 SN74LS174 SN74LS174D SN74LS174N ON2855 SN74LS174-D

ONSEMI[ON Semiconductor]
Part No. 74LS174 SN74LS174 SN74LS174D SN74LS174N ON2855 SN74LS174-D
OCR Text ...AR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN ...
Description Hex D Flip-Flop
LOW POWER SCHOTTKY
From old datasheet system

File Size 104.95K  /  8 Page

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