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0.28m Datasheet PDF File

For 0.28m Found Datasheets File :: 359 Search Time::1.187ms
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				Alpha & Omega Semiconductors
Part No.	AO491411
OCR Text	...ky v ds = 30v, i f = 3a, v f <0.5v@1a the ao4914 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-...
Description	30V Dual N-Channel MOSFET with Schottky Diode
File Size	647.72K / 9 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4914
OCR Text	... ds (v) = 30v, i f = 3a, v f <0.5v@1a the ao4914 uses advanced trench technology to provide mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a schottky diode is co-packaged ...
Description	Dual N-Channel Enhancement Mode Field
File Size	246.00K / 8 Page	View it Online	Download Datasheet

				SeCoS
Part No.	SMG3400
OCR Text	...ant d i m m i n m a x a 2 . 7 0 3 . 1 0 b 1 . 4 0 1 . 6 0 c 1 . 0 0 1 . 3 0 d 0 . 3 5 0 . 5 0 g 1 . 7 0 2 . 1 0 h 0 . 0 0 0 . 1 0 ...28m n-channel enhancement mode power mos.fet e l e c t r i c a l c h a r a c t e r i s t i c s ...
Description	N-Channel Enhancement Mode Power MosFET
File Size	440.60K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDZ2554P07
OCR Text	...= -2.5V, ID = -5A Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: significantly better than SO-8 Ultra-low Qg x rDS(on) ...
Description	Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET
File Size	178.88K / 6 Page	View it Online	Download Datasheet

				SUMIDA CORP
Part No.	RCH8011-120LB RCH8011-150LB
OCR Text	... 10mh ) max. ?8.3 max. 5.5 5.0 ?0.7 5.0 max. ?8.3 max. 7.5 5.0 ?0.7 5.0 max. ?8.3 max. 9.5 5.0 ?0.7 5.0 max. 10.8 5.0 ?0.7 5.0 max. ?...28m) 40m(32m) 47m(38m) 53m(42m) 56m(45m) 65m(52m) 75m(60m) 84m(67m) 110m(88m) 123m(98m) 138m(111m) 1...
Description	1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR
File Size	158.11K / 2 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZXTN19055DZ ZXTN19055DZTA
OCR Text	...r be < 1k or -1v < v be < +0.25v collector-emitter breakdown voltage (base open) bv ceo 55 75 v i c = 10ma () notes: () measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage...
Description	55V, SOT89, NPN medium power transistor
File Size	380.26K / 6 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTP2317N3
OCR Text	...e package shipping mtp2317n3-0-t1-g sot-23 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel environment ...28m typ cystech electronics corp. spec. no. : c566n3 issued date : 2012.04.12 revise...
Description	20V P-CHANNEL Enhancement Mode MOSFET
File Size	271.68K / 9 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation
Part No.	APM7322K APM7322KC-TRL
OCR Text	...ower dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad...28m ? v gs = 10v i ds = 6.2a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 30 t j =150 ...
Description	Dual N-Channel Enhancement Mode MOSFET
File Size	117.33K / 10 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXTN2007GTC ZXTN2007G ZXTN2007GTA
OCR Text	... j , T stg LIMIT 80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 42 78 UNIT C/W C/W NOTES (a) For a device su...
Description	30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
File Size	116.68K / 6 Page	View it Online	Download Datasheet

For 0.28m Found Datasheets File :: 359 Search Time::1.187ms
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