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  0.13a Datasheet PDF File

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    AON7934

Alpha & Omega Semiconductors
Part No. AON7934
OCR Text ...erwise noted avalanche energy l=0.05mh c 3.0 mj 15 4.1 avalanche current c continuous drain current 9 i dsm units 25 36 36 a max q2 72 13 ...13a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =13a v gs ...
Description 30V Dual Asymmetric N-Channel AlphaMOS

File Size 544.66K  /  10 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON7934
OCR Text ...erwise noted avalanche energy l=0.05mh c 3.0 mj 15 4.1 avalanche current c continuous drain current 9 i dsm units 25 36 36 a max q2 72 13 ...13a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =13a v gs ...
Description 30V Dual Asymmetric N-Channel AlphaMOS

File Size 622.07K  /  10 Page

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    APT26GU30B

Advanced Power Technology
Part No. APT26GU30B
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characterist...13A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125C) Collector Cut-off Curr...
Description MOSFET
POWER MOS 7 IGBT

File Size 161.52K  /  6 Page

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    SMK1350F-1

KODENSHI KOREA CORP.
Part No. SMK1350F-1
OCR Text ... ? low r ds(on) : r ds(on) =0.48 (max.) ordering information marking diagram absolute maximum ratings ( t c =25...13a r g =25 ? - 100 - ns total gate charge q g - 36 45 gate-sourc...
Description SWITCHING REGULATOR APPLICATIONS
Advanced N-Ch Power MOSFET

File Size 521.14K  /  8 Page

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    AP4880M

http://
Advanced Power Electronics Corp.
Part No. AP4880M
OCR Text ...3 Rating 25 20 13 10 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Stora...13A VGS=4.5V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=10A 20 - Gate Threshold Voltage Forward Tra...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 79.76K  /  6 Page

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    AP4880GM

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Advanced Power Electronics Corp.
Part No. AP4880GM
OCR Text ...3 Rating 25 20 13 10 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Lin...13A VGS=4.5V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=10A 20 - Gate Threshold Voltage Forward Tra...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 80.03K  /  6 Page

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    IRFP450APBF

International Rectifier
Part No. IRFP450APBF
OCR Text ...) VDSS 500V Rds(on) max 0.40 ID 14A TO-247AC G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM...13A I D , Drain-to-Source Current (A) TJ = 150 C 10 2.5 2.0 TJ = 25 C 1 1.5 ...
Description HEXFET?Power MOSFET
HEXFET㈢Power MOSFET

File Size 188.24K  /  8 Page

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    IRF7821PBF IRF7821TRPBF

International Rectifier
Part No. IRF7821PBF IRF7821TRPBF
OCR Text ...ax. 30 20 13.6 11 100 2.5 1.6 0.02 -55 to + 155 Units V f f c A W W/C C Linear Derating Factor Operating Junction and Stor...13A V VGS = 4.5V, ID = 10A VDS = VGS, ID = 250A e e mV/C A VDS = 24V, VGS = 0V nA S VDS = 24V,...
Description HEXFETPower MOSFET
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET

File Size 284.07K  /  10 Page

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    AP0904GYT-HF AP0904GYT-HF14

Advanced Power Electronics Corp.
Part No. AP0904GYT-HF AP0904GYT-HF14
OCR Text ... recovery time i s =13a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle ...
Description Simple Drive Requirement, Simple Drive Requirement, RoHS Compliant & Halogen-Free

File Size 56.73K  /  4 Page

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    IRFI1310NPBF IRFI1310NPBF-15

International Rectifier
Part No. IRFI1310NPBF IRFI1310NPBF-15
OCR Text ...FET D VDSS = 100V RDS(on) = 0.036 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...13A 4.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 22A 25 V DS = 100V, V GS = 0V A 250 V DS = 80V...
Description ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET

File Size 236.53K  /  9 Page

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