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Matsshita / Panasonic
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| Part No. |
2SB774 0595 2SB774S
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| OCR Text |
...ter and base can be omitted.
0.45 -0.1 1.27
+0.2
0.45 -0.1
1.27
+0.2
123
2.30.2
2.540.15
1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A
I Electrical Characteristics
Parameter Collector cutoff current Colle... |
| Description |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 100MA I(C) | TO-92
From old datasheet system
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| File Size |
58.12K /
3 Page |
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Matsshita / Panasonic
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| Part No. |
2SB940A 2SB940 0256
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| OCR Text |
...tary to 2SD1264 and 2SD1264A
0.70.1
10.00.2 5.50.2
4.20.2 2.70.2
Solder Dip (4.0)
1.40.1
1.30.2 0.5+0.2 -0.1
14.00.5
0.80.1
2.540.3
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Colle... |
| Description |
Power Transistors
From old datasheet system
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| File Size |
59.85K /
3 Page |
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Matsshita / Panasonic
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| Part No. |
2SC2295
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| OCR Text |
...mm
s Features
q q q
2.8 -0.3 0.650.15
+0.2
1.5 -0.05
+0.25
0.650.15
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector ... |
| Description |
Transistor
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| File Size |
61.03K /
4 Page |
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panasonic
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| Part No. |
2SC2295
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| OCR Text |
0.40+0.10 n0.05
Unit: mm
0.16+0.10 -0.06
s Features
q q q
3
1.50+0.25 -0.05
Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic i... |
| Description |
Mini3-G1
From old datasheet system
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| File Size |
64.22K /
4 Page |
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hitachi
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| Part No. |
2SC2613
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| OCR Text |
... Unit V V Test conditions I C = 0.2 A, RBE = , L = 100 mH I C = 5 A, IB1 = -IB2 = 1 A VBE = -5 V, L = 180 H, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 2.5 A*1 VCE = 5 V, IC = 5 A*1 V V s s s I C = 2... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
47.89K /
6 Page |
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hitachi
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| Part No. |
2SC28552SC2856 2SC2855
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| OCR Text |
...
1
2SC2856 Max Min -- -- -- 0.1 0.1 800 120 120 5 -- -- 250 Typ Max Unit -- -- -- -- -- -- -- -- -- 0.1 0.1 800 V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE ... |
| Description |
Silicon NPN Epitaxial
From old datasheet system
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| File Size |
60.80K /
6 Page |
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Sanyo
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| Part No. |
2SC3069
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| OCR Text |
...er saturation voltage (VCE(sat)=0.5V max). * High VEBO (VEBO15V).
JEDEC : TO-92 EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltag... |
| Description |
NPN Epitaxial Planar Silicon Transistor
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| File Size |
85.32K /
3 Page |
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Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC3313 0181
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| OCR Text |
...
4.00.2
s Features
q q q
0.70.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VE... |
| Description |
Transistor
Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)
From old datasheet system
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| File Size |
36.37K /
2 Page |
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panasonic
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| Part No. |
2SC3313
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| OCR Text |
0.8) 3.00.2
2.00.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage te... |
| Description |
NS-A1
From old datasheet system
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| File Size |
48.72K /
3 Page |
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