0.0019 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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0.0019 Datasheet PDF File

For 0.0019 Found Datasheets File :: 4066 Search Time::4.641ms
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				NEC Corp. NEC[NEC]
Part No.	2SK3359 2SK3359-S 2SK3359-Z D14323EJ1V0DS00
OCR Text	... Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 100 20 +20, -10 70 280 1...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	46.42K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK3360 D14331EJ1V0DS00
OCR Text	... 100 20 +20, -10 35 140 35 2.0 150 -55 to +150 35 122 V V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanch...
Description	From old datasheet system SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	38.56K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK3361 D14319EJ1V0DS00
OCR Text	... 100 20 +20, -10 40 160 35 2.0 150 -55 to +150 40 160 V V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche En...
Description	From old datasheet system SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	38.83K / 4 Page	View it Online	Download Datasheet

				FUJI ELECTRIC CO LTD FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK3363-01
OCR Text	...A A V mJ W C C -55 to +150 *1 L=0.925mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage ...
Description	N-CHANNEL SILICON POWER MOS-FET
File Size	118.64K / 4 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK3364-01
OCR Text	...30 867 80 +150 -55 to +150 *1 L=0.463mH, Unit V A A V mJ W C C Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget G...
Description	N-CHANNEL SILICON POWER MOS-FET
File Size	116.78K / 4 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK3365 2SK3365-Z D14255EJ1V0DS00
OCR Text	...RDS(on)3 = 29 m (MAX.) (VGS = 4.0 V, ID = 15 A) * Low Ciss : Ciss = 1300 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Curren...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	61.76K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK3366 2SK3366-Z D14256EJ1V0DS00
OCR Text	...RDS(on)3 = 43 m (MAX.) (VGS = 4.0 V, ID = 10 A) * Low Ciss : Ciss = 730 pF (TYP.) * Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3366 2SK3366-Z PACKAGE TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain t...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	71.08K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SK3367 2SK3367-Z D14257EJ1V0DS00
OCR Text	... Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 m MAX. (VGS = 4.5 V, ID = 18 A) RDS(on)3 = 14.0 m MAX. (VGS = 4.0 V, ID = 18 A) * Low Ciss : Ciss = 2800 pF TYP. * Built-in gate protection diode ORDERING I...
Description	RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO 开关N沟道功率场效应晶体管工业 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	81.80K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK3372
OCR Text	...gm * Low noise voltage of NV 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 I Absolute Maximum Ratings Ta = 25C Parameter Drain-source voltage Drain-gate voltage Dr...
Description	Silicon N-Channel Junction From old datasheet system
File Size	60.01K / 3 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3373
OCR Text	...0 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) (Note 1) Pulse (t...
Description	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
File Size	229.37K / 7 Page	View it Online	Download Datasheet

For 0.0019 Found Datasheets File :: 4066 Search Time::4.641ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |