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  w-cdma 2110 mhz to 2170 mhz fu Datasheet PDF File

For w-cdma 2110 mhz to 2170 mhz fu Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MACOM[Tyco Electronics]
Part No. PA1223
Description 2110-2170 mhz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier

File Size 57.77K  /  2 Page

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    Freescale (Motorola)
Part No. MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3
Description MRF5S21100HR3, MRF5S21100HSR3 2170 mhz, 23 W Avg., 2 x w-cdma, 28 V Lateral N-Channel RF Power MOSFETs
2170 mhz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET

File Size 562.24K  /  12 Page

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    PFM21030 PFM21030F PFM21030SM

List of Unclassifed Manufacturers
ETC[ETC]
Part No. PFM21030 PFM21030F PFM21030SM
Description 2110-2170 mhz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

File Size 416.36K  /  13 Page

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    MOtoROLA
Part No. MRF6S21050L
Description The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 mhz. Suitable for TDMA,

File Size 429.79K  /  12 Page

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    Freescale (Motorola)
MOtoROLA[Motorola, Inc]
Part No. MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
Description 2170 mhz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 mhz, 23 W Avg., 2 x w-cdma, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs

File Size 561.39K  /  12 Page

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    MAFR-000355-000001

M/A-COM Technology Solutions, Inc.
Part No. MAFR-000355-000001
Description Single Junction Drop-In Circulator 2110 mhz-2170 mhz

File Size 85.08K  /  2 Page

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    MAFR-000087-US1C1T

M/A-COM Technology Solutions, Inc.
Part No. MAFR-000087-US1C1T
Description Single Junction Drop-In Circulator 2110 mhz-2170 mhz

File Size 85.12K  /  2 Page

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    PTF180101 PTF180101S

INFINEON[Infineon Technologies AG]
Part No. PTF180101 PTF180101S
Description LDMOS RF Power Field Effect Transistor 10 W 1805-1880 mhz 1930-1990 mhz 10 W 2110-2170 mhz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 mhz, 1930-1990 mhz 10 W, 2110-2170 mhz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 mhz/ 1930-1990 mhz 10 W/ 2110-2170 mhz

File Size 306.52K  /  10 Page

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    FREESCALE SEMICONDUCtoR INC
Part No. MHL21336
Description 2110 mhz - 2170 mhz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 110.35K  /  8 Page

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    PTF210451E PTF210451F PTFA210451E

Infineon Technologies AG
Part No. PTF210451E PTF210451F PTFA210451E
Description Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 mhz and 2110 ?2170 mhz

File Size 255.15K  /  10 Page

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