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For u-mosiii Found Datasheets File :: 135 Search Time::1.828ms
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				Toshiba Semiconductor
Part No.	TPCS821107 TPCS8211
OCR Text	u-mosiii) TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward tr...
Description	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	204.24K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS821207 TPCS8212
OCR Text	u-mosiii) TPCS8212 Lithium Ion Battery Applications * * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: \|Yfs\| = 11 S (typ.) Low leakage curr...
Description	Lithium Ion Battery Applications
File Size	184.85K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCS830207 TPCS8302
OCR Text	u-mosiii) TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward tr...
Description	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	188.81K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8022-H
OCR Text	u-mosiii) TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.00.3 Unit: mm 0.50.1 1.27 8 0.40.1 5 0.05 M A 5.00.2 * * * * * * Small footprint due to a small and thin package...
Description	Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed u-mosiii)
File Size	205.86K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6J25FE
OCR Text	u-mosiii) SSM6J25FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) Ron = 430m (max) (@VGS = -2.5 V) Unit: mm 1.60.05 1.20.05 0.20.05 0.5 ...
Description	High Speed Switching Applications
File Size	154.52K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6J26FE
OCR Text	u-mosiii) SSM6J26FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) Unit: mm ...
Description	High Speed Switching Applications
File Size	153.78K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6K24FE
OCR Text	u-mosiii) SSM6K24FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) Ron = 180m (max) (@VGS = 2.5 V) Unit: mm 1.60.05 1.20.05 0.20.05 0.5 ...
Description	High Speed Switching Applications
File Size	153.29K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6K25FE
OCR Text	u-mosiii) SSM6K25FE High Speed Switching Applications * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) Ron = 190m (max) (@VGS = 2.5 V) Unit: mm 1.60.05 1.20.05 0.20.05 0.5 ...
Description	High Speed Switching Applications
File Size	153.75K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6N24TU
OCR Text	u-mosiii) SSM6N24TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) Ron = 180m (max) (@VGS = 2.5 V) 0.65 0.65 2.00.1 1.30.1 2.10.1 1...
Description	High Speed Switching Applications
File Size	164.09K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	SSM6N25TU
OCR Text	u-mosiii) SSM6N25TU High Speed Switching Applications Unit: mm * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) Ron = 190m (max) (@VGS = 2.5 V) 0.65 0.65 2.00.1 2.10.1 1.70.1 +...
Description	Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.6 to 2.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35 High Speed Switching Applications
File Size	167.60K / 7 Page	View it Online	Download Datasheet

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