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  transistor-trench Datasheet PDF File

For transistor-trench Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    STP4407

Stanson Technology
Part No. STP4407
Description The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

File Size 540.01K  /  6 Page

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    STP4435A

Stanson Technology
Part No. STP4435A
Description STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 280.37K  /  6 Page

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    TY Semiconductor Co., L...
Part No. NX2301P
Description 20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver

File Size 245.42K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. PMV16UN
Description 20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver

File Size 417.52K  /  4 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT100GN60B2 APT100GN60B2G B2G
Description Insulated Gate Bipolar transistor-trench Fieldstop Low Frequency; Package: T-MAX&#153; [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87;
IGBT

File Size 393.22K  /  6 Page

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    STP4925

Stanson Technology
Part No. STP4925
Description STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 569.13K  /  6 Page

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    STP7401 STP7401S32RG

Stanson Technology
Part No. STP7401 STP7401S32RG
Description STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
   STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 453.19K  /  6 Page

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    IPB100P03P3L-04 IPP100P03P3L-04 IPI100P03P3L-04

Infineon Technologies AG
Part No. IPB100P03P3L-04 IPP100P03P3L-04 IPI100P03P3L-04
Description 100 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
OptiMOS-P Trench Power-Transistor

File Size 189.55K  /  9 Page

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    IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15

International Rectifier
Part No. IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15
Description Trench Technology
Trench Technology Ultra Low On-Resistance

File Size 167.58K  /  8 Page

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    Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T

INFINEON[Infineon Technologies AG]
Part No. Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
Description 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

File Size 375.15K  /  12 Page

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