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International Rectifier, Corp. IRF[International Rectifier]
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| Part No. |
IRFL014N
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| OCR Text |
... performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
SOT-22...16 VGS = 10V, ID = 1.9A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 0.85A 1.0 VDS = 44V, VGS ... |
| Description |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管) Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
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| File Size |
140.28K /
8 Page |
View
it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRLL110 IRLL110TR
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| OCR Text |
... performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount applica...16 --- RG = 12 --- 18 --- RD = 8.4 , --- --- --- --- --- 4.0 6.0 250 80 15 --- --- --- --- --- pF n... |
| Description |
1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
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| File Size |
213.54K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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