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Hamamatsu Photonics
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| Part No. |
S3902 S3903 S3903-1024Q S3903-512Q
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| OCR Text |
...ic compatible
l Multichannel spectrophotometry l Image readout system
Figure 1 Equivalent circuit
START CLOCK CLOCK st 1 2 DEGITAL SHIFT REGISTER (MOS SHIFT REGISTER) END OF SCAN
Figure 2 Active area structure
ACTIVE PHOTODIODE... |
| Description |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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| File Size |
217.07K /
6 Page |
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Hamamatsu Photonics K.K.
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| Part No. |
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q S4111-35Q
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| OCR Text |
...w-light-level detection such as spectrophotometry, and cover a wide spectral range from uv to near infrared lig ht. since all elements can be used with a reverse bias for charge storage readout, s4111/s4114 series are able to detect low le... |
| Description |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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| File Size |
126.96K /
4 Page |
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Hamamatsu Photonics K.K.
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| Part No. |
S7034-1007S S7034-0907S
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| OCR Text |
...eries ideally suited for use in spectrophotometry. the b inning operation offers significant improvement in s/n and signal processing speed compared with conventional methods by which signals are digit ally added by an external circuit. ... |
| Description |
CCD area image sensor 防治荒漠化面积图像传感器
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| File Size |
215.41K /
8 Page |
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Hamamatsu Photonics
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| Part No. |
S3921 S3921-512Q S3921-128Q
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| OCR Text |
...ble applications l multichannel spectrophotometry l image readout system image sensor nmos linear image sensor voltage output type with current-integration readout circuit and impedance conversion circuit s3921/s3924 series b a 2.5 mm 1.0 m... |
| Description |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
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| File Size |
232.29K /
6 Page |
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Hamamatsu Photonics
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| Part No. |
S9970 S9971-1008 S9971-0906 S9971-1006 S9970-1008 S9970-0906
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| OCR Text |
...eries ideally suited for use in spectrophotometry. the binning operation offers significant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. s99... |
| Description |
CCD area image sensor Low dark signal ・ low readout noise/front-illuminated FFT-CCD
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| File Size |
289.03K /
10 Page |
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Hamamatsu Photonics
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| Part No. |
S7847
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| OCR Text |
...eries ideally suited for use in spectrophotometry. the binning operation offers significant improvement in s/n and signa l processing speed compared with conventional methods by which signals are digitally added by an external circuit. s78... |
| Description |
CCD area image sensor High IR sensitivity, four-stage TE-cooled, front-illuminated FFT-CCDs
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| File Size |
176.44K /
8 Page |
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Hamamatsu Photonics K.K.
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| Part No. |
S7011-0907 S7011-0906 S7010-0908 S7010-0906
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| OCR Text |
...eries ideally suited for use in spectrophotometry. the binning operation offers si gnificant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an ex ternal circuit. s... |
| Description |
CCD area image sensor 防治荒漠化面积图像传感器
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| File Size |
319.34K /
10 Page |
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it Online |
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