| |
|
 |
Intel Corp.
INTEL[Intel Corporation]
|
| Part No. |
3242 D3242
|
| Description |
ADDRESS MULTIPLEXER AND refresh COUNTER FOR 16K DYNAMIC RAMS
Address Multiplexer and refresh Counter for 16K DRAM
|
| File Size |
238.80K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Linear Technology, Corp.
Linear Technology Corporation
|
| Part No. |
LT3420 LT3420EMSTRPBF LT3420-1
|
| Description |
Photoflash Capacitor Chargers with Automatic refresh
Photoflash Capacitor Chargers with Automatic refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
|
| File Size |
369.84K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| Part No. |
M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S1724CT1-L1L M464S1724CT1-L1L/C1L M464S1724CT1-L1H/C1H M464S1724CT1-C1L M464S1724CT1-C1H M464S1724CT1
|
| Description |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
| File Size |
149.06K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
M464S0924CT2 M464S1724CT2
|
| Description |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
| File Size |
200.75K /
26 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
|
| Description |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
| File Size |
803.02K /
35 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| Part No. |
M366S3253BTS-C75 M366S3253BTS
|
| Description |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K refresh, 3.3V Synchronous DRAMs with SPD
|
| File Size |
151.31K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
