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  powermesh a Datasheet PDF File

For powermesh a Found Datasheets File :: 510    Search Time::2.797ms    
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    ST Microelectronics
Part No. STGB8NC60KD
OCR Text ...ak / to-220 short circuit rated powermesh? igbt features lower on voltage drop (v cesat ) lower c res / c ies ratio (no cross-conduction...a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermes...
Description (STGx8NC60KD) Short circuit rated powermesh IGBT

File Size 460.63K  /  18 Page

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    ST Microelectronics
Part No. STGW39NC60VD
OCR Text ...0v - to-247 very fast switching powermesh? igbt general features low c res / c ies ratio (no cross conduction susceptibility) high freq...a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermes...
Description N-CHaNNEL IGBT

File Size 290.37K  /  13 Page

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    ST Microelectronics
Part No. B9NC60
OCR Text powermesh?ii mosfet (1)i sd 9a, di/dt 100a/s, v dd v (br)dss , t j t jmax n typical r ds (on) = 0.6 w n extremely high dv/dt c...a 9.0 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate vo...
Description Search --To STB9NC60

File Size 399.60K  /  10 Page

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    ST Microelectronics
Part No. P5NC50
OCR Text powermesh?ii mosfet n typical r ds (on) = 1.3 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gat...a i d drain current (continuos) at t c = 100c 3.5 3.5(*) a i dm ( ) drain current (pulsed) 22 22 a...
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File Size 476.45K  /  12 Page

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    ST Microelectronics
Part No. STD6NC40
OCR Text powermesh?ii mosfet (1)i sd 5a, di/dt 100a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.75 w n extremely high dv/dt ...a p tot total dissipation at t c = 25c 55 w derating factor 0.44 w/c dv/dt(1) peak diode recovery v...
Description N-CHaNNEL POWER MOSFET

File Size 380.74K  /  9 Page

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    D1NC60

STMicroelectronics
Part No. D1NC60
OCR Text powermesh?ii mosfet n typical r ds (on) = 7 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate...a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (...
Description Search --To STD1NC6

File Size 222.64K  /  9 Page

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    W14NC50

STMicroelectronics
Part No. W14NC50
OCR Text powermesh?ii mosfet n typical r ds (on) = 0.31 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n ga...a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (...
Description Search --To STW14NC50

File Size 204.05K  /  8 Page

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    STP8NC50

STMicroelectronics
Part No. STP8NC50
OCR Text powermesh?ii mosfet n typical r ds (on) = 0.7 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n ga...a stp8nc50fp 500 v < 0.85 w 8 a symbol parameter value unit stp(b)8nc50(-1) stp8nc50fp v ds drain-s...
Description N-CHaNNEL MOSFET

File Size 255.22K  /  10 Page

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For powermesh a Found Datasheets File :: 510    Search Time::2.797ms    
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