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p3db Datasheet PDF File

For p3db Found Datasheets File :: 468 Search Time::1.031ms
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				Mitsubishi Electric Semiconductor
Part No.	MGF0840G
OCR Text	... po=40.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) ...
Description	High-power GaN HEMT (small signal gain stage)
File Size	113.91K / 4 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1
OCR Text	... dc to 6 ghz ? output power (p3db): 18 w at 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? low thermal resistance package general description pin configuration the triquint t1g6001...
Description	DC ?6 GHz 18 W GaN RF Power Transistor DC 6 GHz 18 W GaN RF Power Transistor
File Size	406.68K / 15 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	ESN35A030MK EGN35A030MK
OCR Text	p3db High Efficiency: 55%(typ.) @ p3db Linear Gain : 13.0dB(typ.) @ f=3.5GHz Proven Reliability ES/EGN35A030MK High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater cons...
Description	High Voltage - High Power GaN-HEMT
File Size	100.62K / 4 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	AFT21S232SR3 AFT21S230SR3
OCR Text	... (maximum value measured at the p3db compression point across the 2110--2170 mhz bandwidth) ? --19.3 ? vbw resonance point (imd third order intermodulation inflection point) aft21s230s aft21s232s vbw res ? 95 60 ? mhz gain flatness in 60 ...
Description	RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	561.02K / 15 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R7BT ATC800A2R0BT ATC800A0R3BT ATC800A100JT ATC800A1R5BT ATC800A1R8BT GRM55ER72A475KA01L RF3934PCK-411 RF3934S2 RF3934SB
OCR Text	...formance ? output power 140w at p3db ? drain efficiency 60% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband a...
Description	120W GaN WIDEBAND POWER AMPLIFIER
File Size	1,662.45K / 14 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R7BT ATC800A0R5BT ATC800A1R0BT ATC800A1R5BT ATC800A1R8BT GRM55ER72A475KA01L RF3933-12 RF3933SR RF3933PCK-411 RF3933S2 RF3933SB RF3933SQ
OCR Text	...formance: ? output power 90w at p3db ? drain efficiency 75% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband a...
Description	90W GaN WIDE-BAND POWER AMPLIFIER
File Size	1,917.58K / 14 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R2BT ATC800A0R8BT ATC800A100JT ATC800A3R0BT RF3932S2 RF3932SB RF3932TR7 GRM55ER72A475KA01L RF3932SR RF3932-12
OCR Text	...rformance ? output power 75w at p3db ?drain efficiency 68% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband am...
Description	60W GaN WIDEBAND POWER AMPLIFIER
File Size	1,839.10K / 14 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R2BT RF3931TR7 ATC800A0R7BT ATC800A100JT ATC800A1R0BT ATC800A3R3BT GRM55ER72A475KA01L RF3931PCK-411 RF3931S2 RF3931SB RF3931SQ RF3931SR RF393112
OCR Text	...cw, f = 2140mhz output power at p3db 47 dbm cw, f = 900mhz output power at p3db 46.5 dbm cw, f = 2140mhz drain efficiency at p3db 65 % cw, f = 900mhz drain efficiency at p3db 65 % cw, f = 2140mhz [1] test conditions: cw operation, v dsq = ...
Description	30W GaN WIDEBAND POWER AMPLIFIER
File Size	1,809.12K / 14 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	ESN26A180IV EGN26A180IV
OCR Text	p3db High Efficiency: 55%(typ.) @ p3db Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability ES/EGN26A180IV High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater cons...
Description	High Voltage - High Power GaN-HEMT
File Size	102.59K / 4 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RFPA3807PCK-410 RFPA3807TR13 RFPA3807TR7 RFPA3807PCK-411 RFPA3807SQ RFPA3807SR
OCR Text	...vswr 23 dbm output load vswr at p3db 5:1 operating junction temperature 160 c operating temperature range (t l ) -40 to +85 c storage temperature -55 to +150 c esd rating: human body model class 1b moisture sensitvity level msl 2 notes: 1...
Description	GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER
File Size	1,833.77K / 10 Page	View it Online	Download Datasheet

For p3db Found Datasheets File :: 468 Search Time::1.031ms
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