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SE074 USB4S012 DT74AL 037N0059 KA558 LM79L15 4HCT37 68HC90
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    2SA836

HITACHI[Hitachi Semiconductor]
Part No. 2SA836
OCR Text ...g = 10 k f = 10 Hz f = 1 kHz note: C 1. The 2SA836 is grouped by hFE as follows. D 250 to 500 160 to 320 2 2SA836 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 300 Typical Output Characteristics -10...
Description Silicon PNP Epitaxial

File Size 31.87K  /  6 Page

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    2SA844

ETC
Hitachi Semiconductor
Part No. 2SA844
OCR Text ...ct Collector output capacitance note: C 160 to 320 D 250 to 500 E 400 to 800 V(BR)EBO I CBO I EBO hFE* 160 -- -- -- -- VCE(sat) VBE fT Cob V V MHz pF I C = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA VCE = -12 V, IE = -2 mA VCB =...
Description Silicon PNP Epitaxial

File Size 22.87K  /  5 Page

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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text ...tance Noise figure Cob NF -- note: D 250 to 500 E 400 to 800 -- 1.5 -- -- 1.5 dB 1. The 2SA872/A is grouped by h FE1 as follows. 2 2SA872, 2SA872A Maximum Collector Dissipation Curve Collector Power Dissipatio...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 36.33K  /  7 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ...x Unit V V A A A V V MHz pF note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 80 to 160 R 120 to 220 note) The part numbers in the...
Description Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

File Size 89.38K  /  5 Page

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    2SA893 2SA893A

HITACHI[Hitachi Semiconductor]
Part No. 2SA893 2SA893A
OCR Text ...acitance Noise figure Cob NF note: D 1. The 2SA893/A is grouped by h FE as follows. E 400 to 800 250 to 500 See characteristic curves of 2SA872 and 2SA872A 2 2SA893, 2SA893A Maximum Collector Dissipation Curve Collector P...
Description Silicon PNP Epitaxial

File Size 23.37K  /  5 Page

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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1001
OCR Text ...ct Collector output capacitance note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min -20 -16 -6 -- -- 100 -- -- -- -- Typ -- -- -- -- -- -- -0.15 -1.0 150 50 Max -- -- -- -0.1 -0.1 320 -0.3 -1.2 -- -- Unit V ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 31.26K  /  6 Page

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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ...ct Collector output capacitance note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min -70 -50 -6 -- -- 100 -- -- -- -- Typ -- -- -- -- -- -- -- -- 150 35 Max -- -- -- -0.1 -0.1 320 -0.6 -1.2 -- -- Unit V V V A...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ...p Max Unit V V V V V MHz pF note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.050.1 Publication date:...
Description 2SB1011
Silicon PNP triple diffusion planar type

File Size 77.42K  /  4 Page

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    2SB1012 2SB1012K 2SB1012_K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1012 2SB1012K 2SB1012_K
OCR Text ...re C to E diode forward current note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Rating -120 -120 -7 -1.5 -3.0 20 150 -55 to +150 1.5 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) ...
Description Silicon PNP Epitaxial

File Size 32.59K  /  6 Page

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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...ct Collector output capacitance note: Mark hFE1 VCE(sat) VBE fT Cob 1 Min -120 -80 -5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 20 Max -- -- -- -10 320 -- -1 -0.9 -- -- Unit V V V A Test conditions I C = -10 A, IE...
Description Silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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