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OKI[OKI electronic componets]
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| Part No. |
MSM7712
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| OCR Text |
...80C186, V33, and V53A * On-chip multi-port memory controller on chip for local shared memory and simplified design construction * E2PROM int...layers of the IEEE 802.11 protocol. The host computer typically runs a NDIS or ODI driver that commu... |
| Description |
Wireless LAN Baseband Controller
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| File Size |
157.16K /
20 Page |
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Hewlett-Packard
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| Part No. |
E6584A
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| OCR Text |
...ubleshoot protocol problems in multi-format wireless devices with one log containing gsm, gprs, egprs, cdma2000, 1xev- do and w-cdma mess...layers and protocol messages ? capture all the data you need in one log with powerful multilaye... |
| Description |
Wireless Protocol Advisor
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| File Size |
1,094.91K /
8 Page |
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Motorola Semiconductor Products
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| Part No. |
MC13233C
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| OCR Text |
...as 800 kbps can be programmed ? multi-master operation ? programmable slave address ? interrupt driven byte-by-byte data transfer; ? support...layers. it is designed fo r wireless personal area networks (wpans) and conveys information over s... |
| Description |
Low Cost SoC Remote Control Platform
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| File Size |
394.32K /
36 Page |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...ree sales for specifications on multi-layer or unique epitaxy requests standard specifications for silicon carbide epitaxial wafer - 50.8mm and 76.2mm substrates substrate orientation : epitaxy is only available for off-axis substrates. con... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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List of Unclassifed Man...
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| Part No. |
TLA7SA00 TLA7SA08
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| OCR Text |
...eractions with time-correlated, multi-bus analysis on a single display. cross triggering and a common global time stamp enables accurate and efficient debugging by showing exactly what was happening on one bus relative to another at any giv... |
| Description |
Tektronix PCI Express Logic Protocol Analyzer
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| File Size |
1,163.15K /
14 Page |
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Price and Availability
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