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    SIHP18N50C-E3

Vishay Siliconix
Part No. SIHP18N50C-E3
OCR Text ...5 c t j = 150 c single p u lse operation in this area limited b y r ds(on) 1 ms 10 ms 100 s 10 3 1 10 10 2 10 10 2 10 3 10 4 0.1 i d , drain c u rrent (a) t c , case temperat u re (c) 0 5 10 15 20 25 50 75 100 125 150 document numb...
Description Power MOSFET

File Size 250.96K  /  9 Page

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    SI3457CDV-T1-GE3

Vishay Siliconix
Part No. SI3457CDV-T1-GE3
OCR Text ... (a) 0.1 t a = 25 c single p u lse 1 ms 10 ms limited b y r ds(on) * b v dss limited 100 s 100 ms dc 1s, 10 s document number: 68602 s09-0131-rev. b, 02-feb-09 www.vishay.com 5 vishay siliconix si3457cdv new product typical characteri...
Description P-Channel 30-V (D-S) MOSFET

File Size 196.77K  /  11 Page

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    TSOP31356

Vishay Siliconix
Part No. TSOP31356
OCR Text ...m w /m2) t po - o u tp u t p u lse w idth (ms) 20771 = 950 nm, optical test signal, fig. 1 o u tp u t p u lse w idth inp u t b u rst length new tsop311../tsop313.. document number 81763 rev. 1.0, 09-aug-07 vishay semiconductors www....
Description IR Receiver Modules for Remote Control Systems

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    SI4866BDY SI4866BDY-T1-E3 SI4866BDY-T1-GE3

Vishay Siliconix
Part No. SI4866BDY SI4866BDY-T1-E3 SI4866BDY-T1-GE3
OCR Text ...1 10 10 t a = 25 c single p u lse 1 s limited b y r ds(on) * document number: 70341 s09-0540-rev. b, 06-apr-09 www.vishay.com 5 vishay siliconix si4866bdy typical characteristics 25 c, unless otherwise noted * the power dissipation ...
Description N-Channel 12-V (D-S) MOSFET

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    SI4104DY-T1-E3

Vishay Siliconix
Part No. SI4104DY-T1-E3
OCR Text ...d 0.1 1ms t a = 25 c single p u lse 10 ms 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1s 10 s limited b yr ds(on) * document number: 69936 s09-0764-rev. b, 04-may-09 www.visha...
Description N-Channel 100-V (D-S) MOSFET

File Size 258.24K  /  10 Page

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    SI4124DY-T1-GE3 SI4124DY-T1-E3

Vishay Siliconix
Part No. SI4124DY-T1-GE3 SI4124DY-T1-E3
OCR Text ...ds(on) * t a = 25 c single p u lse document number: 68601 s09-0392-rev. b, 09-mar-09 www.vishay.com 5 vishay siliconix si4124dy new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on ...
Description N-Channel 40-V (D-S) MOSFET

File Size 253.25K  /  10 Page

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    SI4122DY-T1-GE3

Vishay Siliconix
Part No. SI4122DY-T1-GE3
OCR Text ...1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited document number: 68665 s-81220-rev. a, 02-jun-08 www.vishay.com 5 vishay siliconix si4122dy new product typical characteristics 25 c, unless otherwise...
Description N-Channel 40-V (D-S) MOSFET
   N-Channel 40-V (D-S) MOSFET

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    SI7884BDP-T1-E3

Vishay Siliconix
Part No. SI7884BDP-T1-E3
OCR Text ...) i d 0.1 t a = 25 c single p u lse 10 ms 100 ms 100 s, dc limited b yr ds(on) * b v dss limited 1ms 100 s 1s 10 s document number: 68395 s-82113-rev. b, 08-sep-08 www.vishay.com 5 vishay siliconix si7884bdp new product typical character...
Description N-Channel 40-V (D-S) MOSFET

File Size 161.32K  /  9 Page

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    SI2324DS-T1-GE3

Vishay Siliconix
Part No. SI2324DS-T1-GE3
OCR Text ...100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =166 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa...
Description Trans MOSFET N-CH 100V 1.6A T/R

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    SI2323CDS-T1-GE3

Vishay Siliconix
Part No. SI2323CDS-T1-GE3
OCR Text ...t (a) 0.1 t a = 25 c single p u lse 100 ms 10 s, dc limited b yr ds(on) * b v dss limited 1ms 100 s 1s 10 ms vishay siliconix si2323cds document number: 65700 s13-2081-rev. b, 30-sep-13 www.vishay.com 5 this document is subject to change...
Description P-Channel 20 V (D-S) MOSFET

File Size 220.54K  /  10 Page

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