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				ON Semiconductor
Part No.	NCP1203D60R2
OCR Text	...pply, element-by-element design let's first detail the specs of our power supply: vin: 90265 vac vout: 16.8 v @ 4.2 a (pout = 70 w) short-circuit protection over-voltage protection efficiency > 80% pin = 70 / 0.8 = 87.5 the below sequence d...
Description	PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit Protection
File Size	180.40K / 14 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NCP1203D100R2 NCP1203D40R2
OCR Text	...othering the ncp1200 operation, let's select a charging current of 250 m a. with a gate plateau of 11 v, this leads to a resistor of 11 v/250 m a = 44 k w . with a charging current of 250 m a, what capacitor do we need to generate a ram...
Description	PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit Protection
File Size	126.32K / 8 Page	View it Online	Download Datasheet

				CREE
Part No.	LM16
OCR Text	... no flicker no flicker lightech let 60 no flicker no flicker lightech let 60-lw no flicker no flicker lightech let 75 no flicker no flicker lightech let 105 no flicker no flicker linogene wh601e6a3 no flicker no flicker mdl 316-0003 no flic...
Description	LED Lamp
File Size	384.55K / 3 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text	...D (Si) * Typical SEE Immunity - let of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - let of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 8...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
File Size	73.87K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text	...vent Effects - SEE Immunity for let of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Curre...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
File Size	51.24K / 8 Page	View it Online	Download Datasheet

				Toshiba
Part No.	TL1F1-NW0
OCR Text	...el includes the same rank leds. let the delivery ratio of each rank be unquestioned. 7. 7. 7. 7. optical characteristics (unless otherwise specified, t optical characteristics (unless otherwise specified, t optical characteristics (unle...
Description	LED Lamps
File Size	345.34K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics SGS Thomson Microelectronics
Part No.	AN1281
OCR Text	...ine. component calculation: let us consider the equivalent circuit for a single ended configuration, figure4. let us consider the unloaded system. assuming the currents through r1, r2 and r3 as respectively: as vo equals vo with...
Description	TS613 AS DRIVER FOR ADSL LINE INTERFACES
File Size	38.64K / 3 Page	View it Online	Download Datasheet

				Westcode Semiconductors
Part No.	R1271NS12X
OCR Text	...vered by the frequency ratings. let e p be the energy per pulse for a given current and pulse width, in joules let r th(j-hs) be the steady-state d.c. thermal resistance (junction to sink) and t sink be the heat sink temperature. then t...
Description	(R1271NS10x / R1271NS12x) Distributed Gate Thyristor
File Size	295.67K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NCP5006SNT1 NCP5006SNT1G
OCR Text	...e losses.) l e* di dt (eq. 1) let v bat = e, then: t1 (ip iv) * l v bat (eq. 2) t2 (ip iv) * l vo v bat (eq. 3) since t 2 = 320 ns typical and vo = 21 v maximum, then (assuming a typical v bat = 3.0 v): i t2 * (vo v bat...
Description	Compact Backlight LED Boost Driver LED DISPLAY DRIVER, PDSO5
File Size	224.04K / 24 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp.
Part No.	UT7C139C45GCA UT7C139C45GCX UT7C139C55GCX UT7C138C45GCA UT7C138C45GCX UT7C138C45GCC
OCR Text	...e: 1.0e6 rads(si) - memory cell let threshold: 85 mev-cm 2 /mg - latchup immune (let >100 mev-cm 2 /mg) q qml q and qml v compliant part q packaging options: - 68-lead flatpack - 68-pin pga q 5-volt operation q standard microcircuit drawin...
Description	SRAM\|4KX9\|CMOS\| RAD HARD\|PGA\|68PIN\|CERAMIC 静态存储器\| 4KX9 \|的CMOS \| RAD数据通信硬\|美巡赛\| 68PIN \|陶瓷 SRAM\|4KX8\|CMOS\| RAD HARD\|PGA\|68PIN\|CERAMIC
File Size	274.55K / 21 Page	View it Online	Download Datasheet

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