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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
insulated gate Bipolar transistor N-Channel insulated gate Bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
insulated gate BIPOLAR transisTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA insulated gate BIPOLAR transisTOR SILICON N CHANNEL IGBT
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File Size |
257.03K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
insulated gate BIPOLAR transisTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA insulated gate Bipolar transistor Silicon N Channel IGBT
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File Size |
167.37K /
7 Page |
View
it Online |
Download Datasheet |
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General Electric Solid State GESS[GE Solid State]
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Part No. |
3N206 3N204 3N205
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Description |
Silicon dual insulated-gate field-effect transistor. Silicon Dual insulated-gate Field-Effect transistors
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File Size |
359.86K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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