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  id-13a Datasheet PDF File

For id-13a Found Datasheets File :: 2544    Search Time::1.687ms    
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    MTN13N50FP

Cystech Electonics Corp.
Part No. MTN13N50FP
OCR Text ... BVDSS : 500V RDS(ON) : 0.48 ID : 13A The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The T...
Description N-Channel Enhancement Mode Power MOSFET

File Size 501.97K  /  8 Page

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    Anachip
Part No. AF4407P
OCR Text ...on) (m) 9@VGS=-10V 13@VGS=-4.5V ID (A) -15 -11 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D ...13A VGS=-4.5V, ID=-11A VGS=-10V, ID=-13A, TJ=55C VGS=-5V, ID=-13A IS=2.1A, VGS=0V VDS=-15V, VGS=-10V...
Description P-Channel 30-V (D-S) MOSFET

File Size 267.16K  /  6 Page

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    MTN13N50E3

Cystech Electonics Corp.
Part No. MTN13N50E3
OCR Text ... BVDSS : 500V RDS(ON) : 0.48 ID : 13A The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The T...
Description N-Channel Enhancement Mode Power MOSFET

File Size 469.62K  /  8 Page

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    IRF7413Z

International Rectifier, Corp.
Part No. IRF7413Z
OCR Text ... RDS(on) max 10m:@VGS = 10V ID 13A S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 206.15K  /  10 Page

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    R5013ANX

Rohm
Part No. R5013ANX
OCR Text ...inuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 3 1 3 1 2 2 Limits 500 30 13 52 13 52 13 46 50 150 -55 to +150 Unit...13A VGS=10V RL=19.2 / RG=10 Body diode characteristics (Source-drain) (Ta=25 C) Parameter Forwar...
Description 10V Drive Nch MOSFET

File Size 235.54K  /  6 Page

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    R5013ANJ

Rohm
Part No. R5013ANJ
OCR Text ...inuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 3 1 3 1 2 2 Limits 500 30 13 52 13 52 6.5 11.3 100 150 -55 to +150 ...13A VGS=10V RL=19.2 / RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward...
Description 10V Drive Nch MOSFET

File Size 259.67K  /  6 Page

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    ANACHIP[Anachip Corp]
圆形连接
Part No. AF4407 AF4407PS AF4407PSL AF4407PSLA AF4407P AF4407PSA
OCR Text ...on) (m) 9@VGS=-10V 13@VGS=-4.5V ID (A) -15 -11 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D ...13A VGS=-4.5V, ID=-11A VGS=-10V, ID=-13A, TJ=55C VGS=-5V, ID=-13A IS=2.1A, VGS=0V VDS=-15V, VGS=-10V...
Description V(ds): -30V; V(gs): -25V; -50A; P-channel 30-V (D-S) MOSFET
Circular Connector; No. of Contacts:79; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-35 RoHS Compliant: No
Circular Connector; No. of Contacts:79; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:21-35 RoHS Compliant: No

File Size 260.96K  /  5 Page

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    MTN13N45E3

Cystech Electonics Corp.
Part No. MTN13N45E3
OCR Text ... BVDSS : 450V RDS(ON) : 0.55 ID : 13A The MTN13N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The T...
Description N-Channel Enhancement Mode Power MOSFET

File Size 256.92K  /  8 Page

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    KF13N60N

KEC(Korea Electronics)
Part No. KF13N60N
OCR Text ... FEATURES VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V d D E M P P T 1 2 3 MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Dra...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 64.58K  /  6 Page

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    IRG4BC20U

IRF[International Rectifier]
Part No. IRG4BC20U
OCR Text ... ra te d v o lta g e 10 I 5 Id ea l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequen...13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit I...
Description 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

File Size 165.28K  /  8 Page

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