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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CMLT2207
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| OCR Text |
... unless otherwise noted) SYMBOL icbo icbo icbo icbo IEBO ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=50V VCB=60V, TA=125C VCB=50V, TA=125C VEB=3.0V VCE=60V, VEB(OFF)=3.... |
| Description |
SMD Small Signal Transistor Dual NPN & PNP General Purpose Amplifier SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS
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| File Size |
94.82K /
2 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E CA3096M CA3096M96
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| OCR Text |
...ching and greater stringency in icbo , ICEO , and VCE(SAT). The CA3096C is a relaxed version of the CA3096.
Applications
* Five-Independent Transistors - Three NPN and - Two PNP * Differential Amplifiers * DC Amplifiers * Sense Amplifie... |
| Description |
NPN/PNP Transistor Array, High Voltage, Enhanced icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
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| File Size |
345.72K /
15 Page |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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| Part No. |
BFN19 BFN17
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| OCR Text |
...30 BFN17 BFN19 IEBO BFN17 BFN19 icbo 20 20 100 icbo 100 100 BFN17 BFN19 V(BR)EBO BFN17 BFN19 V(BR)CBO 250 300 5 V(BR)CEO 250 300 typ. max.
Unit
V
nA
A
nA -
V
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
BFN17,... |
| Description |
PNP Silicon High-Voltage Transistors
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| File Size |
46.87K /
5 Page |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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| Part No. |
BFN18 BFN16
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| OCR Text |
...ge 1) IC = 20 mA, IB = 2 mA hFE icbo V(BR)CEO typ. max.
Unit
V 250 300 nA 100 100 A 20 20 100 nA 25 40 V 0.4 0.5 0.9
BFN16 BFN18
V(BR)CBO
BFN16 BFN18
V(BR)EBO
250 300 5
BFN16 BFN18
icbo
BFN16 BFN18
IEBO
-
BFN1... |
| Description |
NPN Silicon High-Voltage Transistors
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| File Size |
46.71K /
5 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BCV46 BCV26
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| OCR Text |
...00 BCV26 BCV46 IEBO BCV26 BCV46 icbo 10 10 100 icbo 100 100 BCV26 BCV46 V(BR)EBO BCV26 BCV46 V(BR)CBO 40 80 10 V(BR)CEO 30 60 typ. max.
Unit
V
nA
A
nA -
1) Pulse test: t 300s, D = 2%
2
Jul-13-2001
BCV26, BCV46
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| Description |
PNP Silicon Darlington Transistors
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| File Size |
48.52K /
5 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BC857T BC857AT BC857BT
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| OCR Text |
...)CEO V(BR)CBO V(BR)CES V(BR)EBO icbo icbo hFE
45 50 50 5 -
-
15 5
V
nA A -
hFE
140 250 180 290 75 250 700 850 650 -
250 475 mV 300 650 750 820
125 220
VCEsat
600 -
1) Pulse test: t < 300s; D < 2%
2
No... |
| Description |
PNP Silicon AF Transistor
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| File Size |
54.42K /
6 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BC857S
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| OCR Text |
...= 5 V VBE(ON) VBEsat VCEsat hFE icbo icbo V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max.
Unit
45 50 50 5 -
-
15 5
V
nA A -
200 600 -
250 290 75 250 700 850 650 -
630 mV 300 650 V 750 820
1) Pulse test: t < 300s;... |
| Description |
PNP Silicon AF Transistor Array
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| File Size |
56.59K /
6 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BC856T BC856AT BC856BT
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| OCR Text |
...125 220 140 250 180 290 250 475 icbo 5 icbo 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max.
Unit
V
nA A -
Collector-emitter saturation voltage1)
mV
mV
1) Pulse test: t < 300s; D < 2%
2
Jan-08-2002
E... |
| Description |
PNP Silicon AF Transistor
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| File Size |
145.43K /
6 Page |
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http:// DIODES[Diodes Incorporated]
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| Part No. |
BC847PN_1 BC847PN BC847PN-7-F
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| OCR Text |
...O hFE VCE(SAT) VBE(SAT) VBE(ON) icbo icbo fT CCBO NF Min 50 45 6 200 -- -- 580 -- -- -- 100 -- -- Typ -- -- -- 290 90 200 700 900 660 -- -- -- 300 3.5 2.0
NPN BC847B Section
Max -- -- -- 450 250 600 -- 700 720 15 5.0 -- 6.0 10 Unit V V ... |
| Description |
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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| File Size |
208.21K /
4 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BC846U
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| OCR Text |
...= 5 V VBE(ON) VBEsat VCEsat hFE icbo icbo V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO typ. max.
Unit
65 80 80 6 -
-
15 5
V
nA A -
200 580 -
250 290 90 200 700 900 660 -
450 mV 250 650 700 770
1) Pulse test: t < 300s; D... |
| Description |
General Purpose Transistors - NPN Silicon AF Transistor Array for AF input stages and drivers
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| File Size |
57.04K /
6 Page |
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