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  iar Datasheet PDF File

For iar Found Datasheets File :: 9802    Search Time::1.422ms    
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    PHU2N50E

Philips Semiconductors
NXP Semiconductors
Part No. PHU2N50E
OCR Text ... MAX. 82 UNIT mJ EAR IAS, iar Unclamped inductive load, IAS = 1.26 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 iar = 2 A; tp = 2.5 s; Tj prior to avala...
Description PowerMOS transistors Avalanche energy rated

File Size 59.61K  /  9 Page

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    NXP Semiconductors N.V.
Part No. LPC1111FHN33
OCR Text ... lpcxpresso base board rev. a iar c/c++ compiler for arm 5.50.0.31878 lpc1114-sk re v. b lpc1343-sk rev. b keil c/c++ compiler v4.0.0.728 lpc1114-sk rev. b lpc1343-sk rev. b an10955 all information provided in this documen...
Description Cortex-M0, 8 kB flash, up to 4 kB SRAM

File Size 358.46K  /  11 Page

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    Tenx Technology
Part No. TM58P10
OCR Text ....2V p.3 weak wake p.3 PA0: I/O iar; Status register; BSR p.3 EXT_CLK RTCC p.4 PB7~0, PA3~0 p.4 FSR BSR p.4 EXT_CLK RTCC, Option Select p.6 LV1~LV2, 2 p.7 : configuration, BSR, direct and indirect p.9 TM58P10 . "lcall" and "lgoto" gen...
Description 8 Bit Microcontroller

File Size 170.80K  /  26 Page

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    2SK3236

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SK3236
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 60 60 20 35 105 30 68 35 3.0 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 216.40K  /  6 Page

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    2SK3667

Toshiba Semiconductor
Part No. 2SK3667
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 7.5 30 45 189 7.5 4.5 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse a...
Description    Silicon N Channel MOS Type Switching Regulator Applications

File Size 222.91K  /  6 Page

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    TOSHIBA
Part No. 2SK3767
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ C C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche curre...
Description MOSFET 2SK/2SJ Series

File Size 231.60K  /  7 Page

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    2SK3767

Toshiba Semiconductor
Part No. 2SK3767
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ C C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche curre...
Description Silicon N Channel MOS Type Switching Regulator Applications

File Size 225.07K  /  6 Page

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    SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3

INFINEON[Infineon Technologies AG]
Part No. SPP21N50C3 SPI21N50C3 SPB21N50C3 SPA21N50C3
OCR Text ...mbol ID 21 13.1 ID puls EAS EAR iar VGS VGS Ptot Tj , Tstg 63 690 1 21 20 30 208 Value SPP_B SPP_B_I SPA Unit A 211) 13.11) 63 690 1 21 20 30 34.5 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single p...
Description Cool MOS?/a> Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 338.27K  /  13 Page

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