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For high-energy Found Datasheets File :: 52919 Search Time::3.578ms
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				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	...VE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also avai...Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temper...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...rature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 C Tj max devices in...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be o...Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Char...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...VE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also avai...Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temper...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	... relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be o...Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Char...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	...VE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES SMD1 Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also avai...Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temper...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Tempera...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	High frequency DC-DC converters IRF3000 HEXFET(R) Power MOSFET RDS(on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l...Energy Avalanche Current Typ. --- --- Max. 47 1.9 Units mJ A Diode Characteristics I...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Tempera...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction a...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

For high-energy Found Datasheets File :: 52919 Search Time::3.578ms
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