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Mitsubishi Electric, Corp.
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Part No. |
MH4S64CBMD-12B MH4S64CBMD-10
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OCR Text |
...t to change without notice. mit-ds-0113-1.1 description the mh4s64cbmd is 4194304-word by 64-bit synchronous dram module. this consists of ...1e -12 30ns 1e -15 40ns 28 28 row active to row active min. -10 20ns 14 -12 24ns 18 -15 30ns 1e
mh... |
Description |
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM 268435456位(4194304字,64位)SynchronousDRAM
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File Size |
722.76K /
47 Page |
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TY Semiconductor Co., Ltd
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Part No. |
AOTF10T60P
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OCR Text |
ds @ t j,max 700v i dm 40a r ds(on),max < 0.7 q g,typ 26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g t...1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode... |
Description |
Trench Power AlphaMOS-II technology
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File Size |
966.74K /
7 Page |
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IPS
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Part No. |
FTA02N65B
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OCR Text |
...free package and finish v dss r ds(on) (max.) i d 650v 8.0 ? 1.5a ordering information part number package brand ftp02n65b to-220 ftp02n65...1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 notes: duty factor: d=t1/t2 peak t j =p dm x z jc x r ... |
Description |
N-Channel MOSFET
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File Size |
273.10K /
9 Page |
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IPS
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Part No. |
FTA06N65
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OCR Text |
...uctive switching curves v dss r ds(on) (max.) i d 650v 1.25 ? 6.0a ordering information part number package brand ftp06n65 to-220 ftp06n65...1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 2 notes: duty factor: d=t1/t2 peak t j =p dm x z jc x r... |
Description |
N-Channel MOSFET
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File Size |
356.44K /
9 Page |
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TY Semiconductor Co., Ltd TY Semiconductor Co., L...
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Part No. |
WPT2N40B WPT2N40-8TR
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OCR Text |
...mosfet drain-source voltage v ds 20 v gate-source voltage v gs 6 v continuous drain current i d 0.69 a pulsed drain current...1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitte... |
Description |
PNP, -32V, -1A, Power Transistor with 20V N-MOSFET
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File Size |
273.55K /
7 Page |
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TY Semiconductor Co., Ltd
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Part No. |
WPT2N32-6 WPT2N32-6TR
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OCR Text |
...mosfet drain-source voltage v ds 20 v gate-source voltage v gs 6 v continuous drain current a i d 0.80 a continuous drai...1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitte... |
Description |
Single, PNP, -30V, -1A, Power Transistor with 20V N-MOSFET
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File Size |
400.63K /
7 Page |
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it Online |
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