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For condition Found Datasheets File :: 151859    Search Time::2.265ms    
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    2SB435

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WINGS[Wing Shing Computer Components]
Part No. 2SB435
OCR Text ...ICBO IEBO hFE1 VCE(sat) fT Test condition VCB= -50V , IE=0 VEB= -5V , IC=0 VCE= -5V , IC=-0.5A IC=-3A , IB=-0.3A VCE= -2V , IC=-0.5A Min Typ Max -10 10 240 -1.0 18 Unit A A 40 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. H...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB595

WINGS[Wing Shing Computer Components]
Part No. 2SB595
OCR Text ...ICBO IEBO hFE1 VCE(sat) fT Test condition VCB= -100V , IE=0 VEB=- 5V , IC=0 VCE= -5V , IC=-1A IC=-4A , IB=-0.4A VCE= -5V , IC=-0.5A Min Typ Max -10 10 320 -2.0 8 Unit A A 40 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Hom...
Description LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL)

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ...h as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFIC...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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    2SB778

WINGS[Wing Shing Computer Components]
Part No. 2SB778
OCR Text ...IEBO hFE1 hFE2 VCE(sat) Test condition IC=-5 mA IE=0 IC=-10 mA RBE= IE=-5mA IC=0 VCB=-60V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-5V IC=-2A IC=-3A IB=-0.3A Min -120 -120 -6 Typ Max Unit V V V mA mA 55 120 -0.1 -0.1 160...
Description PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER/ DC TO DC CONVERTER)
PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER)

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    2SB825

WINGS[Wing Shing Computer Components]
Part No. 2SB825
OCR Text ...ICBO IEBO hFE1 VCE(sat) fT Test condition VCB= -50V , IE=0 VEB= -5V , IC=0 VCE= -2V , IC=-1.0A IC=-4A , IB=-0.4A VCE= -2V , IC=-0.5A Min Typ Max -10 10 100 -0.4 8 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: h...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB827

WINGS[Wing Shing Computer Components]
Part No. 2SB827
OCR Text ... ICBO IEBO Hfe VCE(sat) Test condition IC=-5 mA IE=0 IC=-10 mA RBE= IE=-5mA IC=0 VCB=-60V IE=0 VEB=-4V IC=0 VCE=-2V IC=-1A IC=-4A IB=-0.4A Min -60 -50 -6 Typ Max Unit V V V mA mA V 70 -0.1 -0.1 280 -0.4 Wing Shing Co...
Description PNP PLANAR SILICON TRANSISTOR

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...0.1 0.5 120 GHz pF dB UNIT TEST condition VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz *2 *1 A A V VCE = 5 V, IC = 5 mA, f = 1 GHz Pulse Measureme...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5005 2SC5005-T1 2SC5005NE58119

NEC Corp.
NEC[NEC]
Part No. 2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text ...0.1 0.5 120 GHz pF dB UNIT TEST condition VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 hFE = 10, IC = 5 mA A A V VCE = 5 V, IC = 5 mA*1 VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz *2 VCE = 5 V, IC = 5 mA, f = 1 GHz Pulse Measurement...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ... 1.0 250 GHz pF dB dB UNIT TEST condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA*1 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 10 V, IC = 20 mA,f = 1.0 GHz VCE = 10 V, IC = 7 mA,f = 1.0 GHz A A *1...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ... 1.0 250 GHz pF dB dB UNIT TEST condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA*1 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 8 V, IC = 20 mA,f = 1.0 GHz VCE = 8 V, IC = 7 mA,f = 1.0 GHz A A *1 Pul...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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