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For cond Found Datasheets File :: 3434    Search Time::1.86ms    
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    ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110LJ44 ISPLSI2032VL-110LT44 ISPLSI2032VL-110LT48 ISPLSI2032VL-135LB49 IS

LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Part No. ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110LJ44 ISPLSI2032VL-110LT44 ISPLSI2032VL-110LT48 ISPLSI2032VL-135LB49 ISPLSI2032VL-135LJ44 ISPLSI2032VL-135LT44 ISPLSI2032VL-135LT48 ISPLSI2032VL-180LB49 ISPLSI2032VL-180LJ44 ISPLSI2032VL-180LT44 ISPLSI2032VL-180LT48 2032VL ISPLSI2032VL-135LT44I
OCR Text ...ting conditions PARAMETER TEST cond. A A A -- -- -- A -- -- A -- A -- B C B C -- -- 3 # 1 2 3 4 5 6 7 8 9 DESCRIPTION 1 -180 -- -- 2 1 -135 -- -- 135 100 167 4.0 -- 0.0 5.5 -- 0.0 -- 5.0 -- -- -- -- 3.0 3.0 7.5 10.0 -- -- ...
Description 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44

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    ISPLSI2064E-100LT100 ISPLSI2064E-135LT100 ISPLSI2064E-200LT100 ISPLSI2064E

Lattice Semiconductor Corporation
Part No. ISPLSI2064E-100LT100 ISPLSI2064E-135LT100 ISPLSI2064E-200LT100 ISPLSI2064E
OCR Text ...conditions PARAMETER TEST 2 4# cond. A A A - - - A - - - - A - B C B C - - DESCRIPTION1 -200 - - 200 1 tsu2 + tco1 -135 - - 135 100 143 5.0 - 0.0 6.0 - 0.0 - 5.0 - - - - 3.5 3.5 7.5 10.0 - - - - 4.0 - - 4.5 - 10.0 - 12.0 12.0 7.0 7.0 -...
Description In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFASTHigh Density PLD

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    ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI2096E-135LQ128 ISPLSI2096E-135LT128 ISPLSI2096E-180LQ128 ISPLSI2096E-180

LATTICE[Lattice Semiconductor]
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
Part No. ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI2096E-135LQ128 ISPLSI2096E-135LT128 ISPLSI2096E-180LQ128 ISPLSI2096E-180LT128 2096E
OCR Text ...conditions PARAMETER TEST 2 4# cond. A A A - - - A - - - - A - B C B C - - DESCRIPTION1 -180 - - 180 1 tsu2 + tco1 -135 - - 135 100 143 5.0 - 0.0 6.0 - 0.0 - 5.0 - - - - 3.5 3.5 7.5 10.0 - - - - 4.0 - - 4.5 - 10.0 - 12.0 12.0 7.0 7.0 -...
Description In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFAST?/a> High Density PLD
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128
In-System Programmable SuperFAST??High Density PLD

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    ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI2096VE-135LT128I ISPLSI2096VE-200LT128 ISPLSI2096VE-250LT128 2096VE

Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
Part No. ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI2096VE-135LT128I ISPLSI2096VE-200LT128 ISPLSI2096VE-250LT128 2096VE
OCR Text ...ting conditions PARAMETER TEST cond. A A A -- -- -- A -- -- A -- A -- B C B C -- -- 3 # 1 2 3 4 5 6 7 8 9 DESCRIPTION 1 -250 -- -- 250 1 tsu2 + tco1 -200 -- -- 200 133 200 3.0 -- 0.0 4.0 -- 0.0 -- 4.0 -- -- -- -- 2.5 2.5 4...
Description 3.3V In-System Programmable SuperFAST?/a> High Density PLD
CRYSTAL 24.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD

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    MC10E431 MC10E431FN MC100E431FN MC100E431 ON0652 MC100E431FNR2 MC10E431FNR2

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E431 MC10E431FN MC100E431FN MC100E431 ON0652 MC100E431FNR2 MC10E431FNR2
OCR Text ...0 127 -1.5 132 152 0 V 1 Unit V cond IIH IEE VCMR 1. VCMR is referenced to the most positive side of the differential input signal. Normal specified operation is obtained when the input signals are within the VCMR range and the inp...
Description From old datasheet system
3-BIT DIFFERENTIAL FLIP-FLOP

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    MC10E452 MC10E452FN MC100E452 ON0656

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E452 MC10E452FN MC100E452 ON0656
OCR Text ....0 74 85 89 102 -0.4 V 1 Unit V cond IIH IEE VCMR 1. VCMR is referenced to the most positive side of the differential input signal. Normal specified operation is obtained when the input signals are within the VCMR range and the inp...
Description From old datasheet system
5-BIT DIFFERENTIAL REGISTER

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    MC10E457 MC10E457FN MC100E457 MC100E457FN ON0657

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E457 MC10E457FN MC100E457 MC100E457FN ON0657
OCR Text ... 92 106 110 127 mV V 1 2 Unit V cond IIH IEE VPP(DC) VCMR 1. Differential input voltage required to obtain a full ECL swing on the outputs. 2. VCMR is defined as the range within which the VIH level may vary, with the device still ...
Description From old datasheet system
TRIPLE DIFFERENTIAL 2:1 MULTIPLEXER

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    74AC14 74AC14B 74AC14M 74AC14MTR 5040 74AC14TTR

STMICROELECTRONICS[STMicroelectronics]
Part No. 74AC14 74AC14B 74AC14M 74AC14MTR 5040 74AC14TTR
OCR Text ...Delay Time 3.3(*) 5.0(**) T est cond ition Value o o T A = 25 C -40 to 85 C Min. Typ. Max. Min . Max. 1.5 6 11 1 13 1.5 4.5 8 1 9 Unit ns (*) Voltage range is 3.3V 0.3V (**) Voltage range is 5V 0.5V 3/7 74AC14 CAPACITIVE CHAR...
Description HEX SCHMITT INVERTER
From old datasheet system
HEX INVERTER

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    74ACT74 74ACT74B 74ACT74M 4827

STMicroelectronics
Part No. 74ACT74 74ACT74B 74ACT74M 4827
OCR Text ...Frequency 5.0 5.0 (*) T est cond ition Value T A = 25 oC -40 to 85 o C Min. Typ. Max. Min . Max. 5.0 5.0 1.5 0.5 -0.5 -0.7 100 250 10.0 10.0 5.0 3.0 1.0 1.0 85 11.0 11.0 6.0 3.5 1.0 1.0 Unit ns ns ns ns ns ns MHz (*) 5.0(...
Description DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR
From old datasheet system

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    BC847 4306 BC847B

STMICROELECTRONICS[STMicroelectronics]
Part No. BC847 4306 BC847B
OCR Text ...r Cut-off Current (IE = 0) Test cond ition s V CE = 30 V V CE = 30 V I C = 10 A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA A V V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO Collector-Base Breakdown Voltage (...
Description From old datasheet system
SMALL SIGNAL NPN TRANSISTORS

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For cond Found Datasheets File :: 3434    Search Time::1.86ms    
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