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    M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5V208FP-12LL M5M5V208FP-70L M5M5V208FP-70LL M5M5V208FP-85L M5M5V208FP-8

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5V208FP-12LL M5M5V208FP-70L M5M5V208FP-70LL M5M5V208FP-85L M5M5V208FP-85LL M5M5V208KR-10L M5M5V208KR-10LL M5M5V208KR-12L M5M5V208KR-12LL M5M5V208KR-70L M5M5V208KR-70LL M5M5V208KR-85L M5M5V208KR-85LL M5M5V208KV-10L M5M5V208KV-10LL M5M5V208KV-12L M5M5V208KV-12LL M5M5V208KV-70L M5M5V208KV-70LL M5M5V208KV-85L M5M5V208KV-85LL M5M5V208RV-10L M5M5V208RV-10LL M5M5V208RV-12L M5M5V208RV-12LL M5M5V208RV-70L M5M5V208RV-70LL M5M5V208RV-85L M5M5V208RV-85LL M5M5V208VP-10L M5M5V208VP-10LL M5M5V208VP-12L M5M5V208VP-12LL M5M5V208VP-70L M5M5V208VP-70LL M5M5V208VP-85L M5M5V208VP-85LL M5V208S
OCR Text ...0ns ) CAPACITANCE Symbol CI CO Parameter Input capacitance Output capacitance (Ta=0 ~ 70C, Vcc= 2.7 ~ 3.6V, unless otherwise noted) Limits Test conditions Unit Typ Min Max pF VI=GND, VI=25mVrms, f=1MHz 7 pF VO=GND,VO=25mVrms, f=1MHz...
Description From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM

File Size 75.19K  /  7 Page

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    M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP D98015_A M5M5V408BFP-85H M5M5V408BTP-85LW M5M5V408BFP-10H M5

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5M5V408BTP D98015_A M5M5V408BFP-85H M5M5V408BTP-85LW M5M5V408BFP-10H M5M5V408BFP-10HI M5M5V408BFP-10HW M5M5V408BFP-10L M5M5V408BFP-10LI M5M5V408BFP-10LW M5M5V408BFP-85HI M5M5V408BFP-85HW M5M5V408BFP-85L M5M5V408BFP-85LI M5M5V408BFP-85LW M5M5V408BKR-10H M5M5V408BKR-10HI M5M5V408BKR-10HW M5M5V408BKR-10L M5M5V408BKR-10LI M5M5V408BKR-10LW M5M5V408BKR-85H M5M5V408BKR-85HI M5M5V408BKR-85HW M5M5V408BKR-85L M5M5V408BKR-85LI M5M5V408BKR-85LW M5M5V408BKV-10H M5M5V408BKV-10HI M5M5V408BKV-10HW M5M5V408BKV-10L M5M5V408BKV-10LI M5M5V408BKV-10LW M5M5V408BKV-85H M5M5V408BKV-85HI M5M5V408BKV-85HW M5M5V408BKV-85L M5M5V408BKV-85LI M5M5V408BKV-85LW M5M5V408BRT-10H M5M5V408BRT-10HI M5M5V408BRT-10HW M5M5V408BRT-10LI M5M5V408BRT-10LW M5M5V408BRT-85H M5M5V408BRT-85HI M5M5V408BRT-85HW M5M5V408BRT-85L M5M5V408BRT-85LI M5M5V408BRT-85LW M5M5V408BTP-10H M5M5V408BTP-10HI M5M5V408BTP-10HW M5M5V408BTP-10L M5M5V408BTP-10LI M5M5V408BTP-10LW M5M5V408BTP-85H M5M5V408BTP-85HI M5M5V408BTP-85HW M5M5V408BTP-85L M5M5V408BTP-85LI M5M5V408BRT-10L
OCR Text ...mits Typ Max Units Min CI CO 8 10 pF MITSUBISHI ELECTRIC 4 revision-K1.0e, ' 98.09.07 MITSUBISHI LSIs M5M5V408BFP/TP/RT/KV/KR 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM AC ELECTRICAL CHARACTERISTICS (1) T...
Description From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

File Size 160.82K  /  14 Page

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    TS68882VF25 TS68882 TS68882DESC01XA TS68882DESC01YA TS68882DESC02XA TS68882DESC02YA TS68882DESC03XA TS68882DESC03YA TS68

ATMEL[ATMEL Corporation]
Part No. TS68882VF25 TS68882 TS68882DESC01XA TS68882DESC01YA TS68882DESC02XA TS68882DESC02YA TS68882DESC03XA TS68882DESC03YA TS68882DESC04XA TS68882DESC04YA TS68882VR25 TS68882MFB_C16 TS68882MFB_C20 TS68882MFB_C25 TS68882VR20 TS68882VF16 TS68882VR33 TS68882MF16 TS68882MF20 TS68882MF25 TS68882MR16 TS68882MR20 TS68882MR25 TS68882MR33 TS68882MRB_C16 TS68882MRB_C20 TS68882MRB_C25 TS68882MRB_C33 TS68882VF20 TS68882VF33 TS68882VR16 TS68882MF33
OCR Text ... CMOS Enhanced Floating-point Co-processor TS68882 Description The TS68882 enhanced floating-point co-processor is a full implementati...packaged in hermetically sealed ceramic packages which are conform to case outlines of MIL-STD-1835 ...
Description Enhanced 32-bit FPU, 16/20/25-33 MHz
CMOS Enhanced Floating-point Co-processor

File Size 1,208.27K  /  43 Page

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    Unisem Group
UNISEM[UNISEM]
Part No. US1260 US1260CM US1260CP US1260CT
OCR Text ...0 mS pulse,Io=Ifl 0.01 f=120HZ ,Co=25uF Tantalum Io=0.5*Ifl 70 Io=10mA 0.02 Io=10mA 0.5 Ta=125C,1000 Hrs 0.3 Ta=25C 10hz<f<10khz 0.003 5 TES...packaged in a 7 pin TO220 which can easily be programmed with the addition of two external resistors...
Description DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

File Size 66.35K  /  9 Page

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    VG36128161A VG36128401A VG36128801A

VML[Vanguard International Semiconductor]
Part No. VG36128161A VG36128401A VG36128801A
OCR Text ...e Pre to Au e rit W ry ve co re Read WRITE SUSPEND CKE CKE WRITE Read (write recovery) Write R Auto ead w Prec ith harg e Write with Auto Precharge ith e d w arg Rea Prech to Au (writ e re cove ry) PRE REA...
Description CMOS Synchronous Dynamic RAM

File Size 937.82K  /  69 Page

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    VG36256161A VG36256401A VG36256801A

VML[Vanguard International Semiconductor]
Part No. VG36256161A VG36256401A VG36256801A
OCR Text ...e Pre to Au e rit W ry ve co re Read WRITE SUSPEND CKE CKE WRITE Read (write recovery) Write R Auto ead w Prec ith harg e Write with Auto Precharge ith e d w arg Rea Prech to Au (writ e re cove ry) PRE REA...
Description CMOS Synchronous Dynamic RAM

File Size 941.72K  /  69 Page

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    VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36648041CT

VML[Vanguard International Semiconductor]
Part No. VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36648041CT
OCR Text ...t rge ad cha Re Pre to Au re co ve r y Write (Write recovery) Read PRE W rit e WRITE SUSPEND CKE CKE WRITE Read (write recovery) Write READ CKE CKE READ SUSPEND Write with Auto Precharge R ...
Description CMOS Synchronous Dynamic RAM

File Size 946.09K  /  70 Page

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    WED9LC6816V1510BC WED9LC6816V1510BI WED9LC6816V1512BC WED9LC6816V1512BI WED9LC6816V WED9LC6816V1310BC WED9LC6816V1312BC

White Electronic Designs
ETC
Part No. WED9LC6816V1510BC WED9LC6816V1510BI WED9LC6816V1512BC WED9LC6816V1512BI WED9LC6816V WED9LC6816V1310BC WED9LC6816V1312BC WED9LC6816V1312BI WED9LC6816V1310BI WED9LC6816V2010BI WED9LC6816V1610BI WED9LC6816V1612BC WED9LC6816V1610BC WED9LC6816V2010BC WED9LC6816V2012BC WED9LC6816V2012BI
OCR Text ...TA = 25C; f = 1MHz Symbol CI CO CA CCK Typ 5 8 5 4 Max 8 10 8 6 Units pF pF pF pF White Electronic Designs SSRAM AC CHARACTERISTICS Symbol Parameter Clock Cycle Time Clock HIGH Time Clock LOW Time Clock to output valid Cloc...
Description 256K X 32 SSRAM/ 4M X 32 SDRAM

File Size 399.20K  /  27 Page

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    CS8122YTVA5 CS8122YTHA5 CS8122 CS8122YT5

ZF Electronics, Corp.
CHERRY[Cherry Semiconductor Corporation]
Part No. CS8122YTVA5 CS8122YTHA5 CS8122 CS8122YT5
OCR Text ..., ESR = 0 101 ESR (ohms) CO= 47/68mF Stable Region 60 50 40 30 20 10 0 100 101 102 103 104 105 106 107 108 FREQUENCY (Hz) COUT= 10mF, ESR = 10W COUT= 10mF, ESR = 1W 100 10-1 10 10 -2 CO= 47mF CO= 68mF -3 10-4 100 ...
Description 2% 5V, 750mA Low Dropout Linear Regulator with Delayed RESET 2V的,七百五十?毫安低压降线性稳压器的延迟复
2% 5V/ 750mA Low Dropout Linear Regulator with Delayed RESET

File Size 174.93K  /  8 Page

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