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  c12.20 Datasheet PDF File

For c12.20 Found Datasheets File :: 5053    Search Time::1.015ms    
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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S18140HR3
OCR Text ...z8 r5 z16 z13 z19 z9 z20 c2 c10 c12 c13 c16 + c6 z21 z22 z23 b1 r1 c11 c14 c15 z18 z17 z12 z14 z15 z11 z10 z1 z2 z3 c8 + c5 r4 r6 c3 b2 r2 c...20 0 ?4 ?8 ?12 v dd = 28 vdc, p out = 29 w (avg.) i dq = 1200 ma, 2?carrier n?cdma 2.5 mhz carri...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

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    飞思卡尔半导体(中国)有限公司
Part No. MRFE6S9135HR3
OCR Text ... bias c3 z6 r1 c7 c9 c8 c11 c10 c12 z14 z15 z16 z7 c15 c16 c17 c18 z8 r2 c4 + c5 r3 c19 + v supply c20 c21 c22 c23 c24 + v supply c13 table ...20 0 ?5 ?10 ?15 980 860 irl g ps parc f, frequency (mhz) figure 3. single - carrier w - cdma broadba...
Description N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外

File Size 438.73K  /  12 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF9002NR2
OCR Text ... c9 c18 c13 z11 z12 z13 z14 z15 c12 c11 c17 c15 + + + + + + table 5. mrf9002nr2 broadband test circuit component designations and values des...20 dbm p in , input power (dbm) figure 4. output power and power gain versus input power p out , out...
Description RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧

File Size 393.48K  /  12 Page

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    08090 PTF080901 PTF080901E PTF080901F 8090

INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. 08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text ...F 35V l4 DUT RF_IN l7 C12 2.2pF C15 33pF l1 C4 33pF l2 l3 C5 4.3pF l5 C6 6.2pF l6 l9 C13 1.4pF l10 l11...20 [.780.008] 2X R1.63 [.064] 4X R1.52 [.060] SPH 1.57 [.062] 3.760.38 [.142.015] 0.0381 [....
Description    LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

File Size 201.97K  /  10 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6V2300NBR1
OCR Text ... 0.630 microstrip z1 rf input c12 z2 z3 z4 z5 z6 dut z9 c23 rf output z10 c5 b1 v bias v supply c3 + c4 c2 + r1 c18 c19 c17 c20 + c1 + c7 ...20 k pf chip capacitors atc200b203kt50xt atc c6, c11, c17 0.1 f, 50 v chip capacitors cdr33bx104ak...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 515.79K  /  14 Page

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    CS5012A

Cirrus Logic
Part No. CS5012A
OCR Text ...eset vd+ r23 (optional) va- d0 c12 sw1-4 + + 37 eot hold 1 r3 +5v -5v vd+ vd- r1 r2 va+ va- rd r7 r5 vd+ r4 24 34 35 bp/up cal intlv sw1-1 ...20 master clock cycles) to each conversion cycle. thus, a full calibration cycle completes every 72,...
Description 12/14/16-Bit, Self-Calibrating A/D Converters

File Size 82.62K  /  7 Page

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    MRF9085LR306

Freescale Semiconductor, Inc
Part No. MRF9085LR306
OCR Text ...e capacitors, gigatrim c5, c6, c12 8.2 pf chip capacitors, atc c7, c17, c18, c19 10 f, 35 v tantalum surface mount capacitors, kemet c8 20 k pf chip capacitor, atc c10, c11 16 pf chip capacitors, atc c14 0.6 - 4.5 variable capacitor, ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 328.35K  /  12 Page

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    Philips
Part No. BLF2047L/90 BLF2047L90
OCR Text ...ut 50 w output 50 w c1 c2 c14 c12 r2 f1 c15 c6 c13 c16 c17 v dc r1 c5 v gate fig.10 2 ghz class-ab test circuit. 2000 mar 06 8 philips ...20.7 mm l16 50 w 10.8 2.4 mm l17 11.8 w 3 7.9 mm l18 50 w 2.3 2.4 mm l19 50 w 3 2.4 mm l20 50 w ...
Description UHF power LDMOS transistor

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    MRF6P21190HR610

Freescale Semiconductor, Inc
Part No. MRF6P21190HR610
OCR Text ...dut c9 r3 c10 + c8 r4 b4 b3 c11 c12 + c14 + c15 c19 c16 c17 c18 + c20 + c21 + v supply z14 z16 z18 z20 c13 z13 z15 z17 z19 c22 c23 + c24 c28...20 18 16 14 12 10 8 6 -- 5 0 40 30 20 10 -- 1 0 -- 2 0 -- 3 0 -- 4 0 d , drain efficiency (%) d 3....
Description RF Power Field Effect Transistor

File Size 704.85K  /  11 Page

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    MAAL-010528-001SMB MAAL-010528-TR0500

M/A-COM Technology Solutions, Inc.
Part No. MAAL-010528-001SMB MAAL-010528-TR0500
OCR Text ... external components c7 through c12 are optional. no v g bias is needed. if c7 through c12 are removed, traces must also be removed....20 ? noise figure 8 ghz 10 ghz 12 ghz db ? 1.5 1.8 2.1 2.0 2.3 2.8 input return loss ...
Description The MAAL-010528 is a high performance X-band GaAs LNA, housed in a miniature, lead-free 3 mm PQFN surface mount plastic package.

File Size 533.54K  /  7 Page

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