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  a-fet Datasheet PDF File

For a-fet Found Datasheets File :: 25994    Search Time::7.765ms    
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    2SJ222

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ222
OCR Text ... 35 150 -55 to +150 Unit V V A A A W C C 2 2SJ222 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -100 2...
Description Silicon P-Channel MOS FET

File Size 33.29K  /  6 Page

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    2SJ243 D11215EJ1V0DS00

NEC Corp.
Part No. 2SJ243 D11215EJ1V0DS00
OCR Text a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving syste...
Description From old datasheet system
P-CHANNEL MOS FET FOR SWITCHING

File Size 58.34K  /  6 Page

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    2SJ244

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SJ244
OCR Text ...4 1 150 -55 to +150 Unit V V A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Marking is "JY". Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Ga...
Description Silicon P-Channel MOS FET

File Size 44.24K  /  8 Page

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    2SJ247

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ247
OCR Text ... 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -100 20 -- -- -1.0 ...
Description Silicon P-Channel MOS FET

File Size 46.46K  /  8 Page

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    2SJ248

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ248
OCR Text ... 25 150 -55 to +150 Unit V V A A A W C C 2 2SJ248 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -100 2...
Description Silicon P-Channel MOS FET

File Size 32.65K  /  6 Page

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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ...1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Marking is "MY". Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Ga...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ317

HITACHI[Hitachi Semiconductor]
Part No. 2SJ317
OCR Text ...2 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm). 3. Marking is "NY". Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage...
Description Silicon P-Channel MOS FET

File Size 37.77K  /  8 Page

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    2SJ319 2SJ319L 2SJ319S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ319 2SJ319L 2SJ319S
OCR Text ... 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -200 20 -- -- -2.0 ...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 44.83K  /  9 Page

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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ... 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -120 20 -- -- -1.0 ...
Description Silicon P-Channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ352 2SJ351

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ352 2SJ351
OCR Text ... 150 -55 to +150 Unit V V A A W C C 2 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ351 2SJ352 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX -18...
Description Silicon P-Channel MOS FET 硅P沟道场效应晶体管

File Size 39.26K  /  8 Page

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