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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
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| Description |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
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| File Size |
195.42K /
18 Page |
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it Online |
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意法半导
ST Microelectronics
STMicroelectronics N.V.
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| Part No. |
M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70MH6TR M48T37V-70MH6TR M48T37Y-10MH1 M48T37VSH M48T37V-70MH1TR M48T37V-10MH6TR
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| Description |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
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| File Size |
131.17K /
20 Page |
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it Online |
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http://
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| Part No. |
HFBR-53A5VEM HFBR-53A5VFM
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| Description |
3.3 V 1 x 9 Fiber Optic Transceivers for Gigabit Ethernet Low Voltage
DIODE ZENER SINGLE 500mW 16Vz 5mA-Izt 0.05 0.1uA-Ir 11.2 PowerDI-323 3K/REEL
DIODE ZENER SINGLE 500mW 15Vz 5mA-Izt 0.05 0.1uA-Ir 10.5 PowerDI-323 3K/REEL
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| File Size |
308.73K /
14 Page |
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it Online |
Download Datasheet |
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Shanghai Lunsure Electronic...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
上海朗硕科技有限公司
Shanghai LUNSURE Electronic Technology Co., Ltd.
涓?捣???绉????????
Shanghai Lunsure Electr...
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| Part No. |
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B MMBZ5240B MMBZ5226B MMBZ52 MMBZ5254B MMBZ5257B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5241B MMBZ5242B MMBZ5244B MMBZ5246B MMBZ5247B MMBZ5248B MMBZ5249B MMBZ5251B MMBZ5253B MMBZ5255B MMBZ5256B MMBZ52-SERIES
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| Description |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50
5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极
3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极
Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
SURFACE MOUNT ZENER DIODES
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| File Size |
20.84K /
1 Page |
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it Online |
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Price and Availability
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