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Fujitsu
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Part No. |
MB89867 MB89643 E712504
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OCR Text |
...
MB89865/867/P867/W867 MB89855/857/P857/W857/T855
s DESCRIPTION
The MB89860/850 series has been developed as a general-purpose version of...65
P82 P81 P80 @ P76 P75 P74 P73 P72 P71 P70 MOD0 MOD1 X0 X1 VSS RST P27/A L E P26/RD P25/WR P24/... |
Description |
F 2 MC-8L MB89860/850 Series From old datasheet system
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File Size |
425.88K /
51 Page |
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Mitsubishi
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Part No. |
MGF0921A 0921A
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OCR Text |
...0.863 0.862 0.861 0.859 0.859 0.857 0.855 0.853 0.851 0.848 0.846 0.844 0.840 0.837 0.833 0.830 Ang(deg) -106.34 -118.84 -131.17 -140.67 -14...65 -177.42 -179.09 179.23 177.64 176.15 174.76 173.45 172.04 170.52 168.59 166.23 163.00 160.79 158.... |
Description |
L & S BAND GaAs FET From old datasheet system
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File Size |
85.84K /
3 Page |
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Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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Part No. |
SPI-336-99-T1 SPI-336-99-T1D SPI-336-99-T1A
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OCR Text |
...i City, 680-8634 Japan TEL: +81-857-21-2137 FAX: +81-857-21-2161
PS No.6030 6/6
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Description |
POSITION, LINEAR SENSOR-DIFFUSE, 1-1mm, 1.10-0.45mA, RECTANGULAR, SURFACE MOUNT POSITION, LINEAR SENSOR-DIFFUSE, 1-1mm, 0.20-0.08mA, RECTANGULAR, SURFACE MOUNT Ultraminiature photoreflector supporting reflow soldering Single transistor type Ultraminiature photoreflector supporting reflow soldering (Single transistor type)
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File Size |
36.17K /
6 Page |
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STMicroelectronics N.V.
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Part No. |
STS8DNH3LL
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OCR Text |
...VDS=15 V ID = 4 A Min. Typ. 8.5 857 147 20 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
2/9
STS8DNH3LL
ELECTRICAL CHARACTERI...65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.1... |
Description |
DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET 双N沟道30V 0.018欧姆- 8A条的SO - 8低栅极电荷STripFET第三功率MOSFET
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File Size |
221.14K /
9 Page |
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Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
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Part No. |
MRF6P3300H MRF6P3300HR5 MRF6P3300HR3
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OCR Text |
...1600 mA, Pout = 270 W PEP, f1 = 857 MHz, f2 = 863 MHz Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Pout @ 1 dB C...65 900
Figure 3. Single - Carrier OFDM Broadband Performance @ 60 Watts Avg.
21 44 D Gps 42 40 3... |
Description |
RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
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File Size |
871.41K /
24 Page |
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Price and Availability
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