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IRF[International Rectifier]
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| Part No. |
IRFY430CM
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| OCR Text |
...ture Weight
IRFY430CM
4.5 2.8 18 75 0.6 20 280 4.5 7.5 3.5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical)
Units
A W W/K V mJ A mJ V/ns C C g
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IRFY430CM Device
Index
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| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)
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| File Size |
240.38K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY9140CM IRFY9140C
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| OCR Text |
...otes refer to the last page -15.8 -10 -60 100 0.8 20 640 -15.8 10 -5.5 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
9/29/03
IRFY9140C, IRFY9140CM... |
| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
253.79K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY9140M IRFY9140
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| OCR Text |
...otes refer to the last page -15.8 -10 -60 100 0.8 20 640 -15.8 10 -5.5 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
01/18/07
IRFY9140, IRFY9140M
... |
| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
277.03K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
IRGIH50F
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| OCR Text |
...of Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCE...6mm from case for 10s) 10.5 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
... |
| Description |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
535.74K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGMC30F
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| OCR Text |
...of Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCE...6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
R... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
541.07K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGMC30U
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| OCR Text |
...n) max = 3.0V
@VGE = 15V, IC = 8.0A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier ...6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
R... |
| Description |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
543.07K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9230
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| OCR Text |
...
(R)
RAD HARD
-200 Volt, 0.8 , RAD HARD HEXFET
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent ...6mm) from case for 10s) 11.5 (typical)
g
To Order
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IRH9230 Device
Ind... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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| File Size |
102.18K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9250
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| OCR Text |
...- -- -- -- -- -- -- -- -- -- -- 8.7 -- -- 0.315 0.33 -4.0 -- -25 -250 -100 100 200 45 85 60 240 225 175 -- V V/C V S( ) A nA nC
Test Co...6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from pac... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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| File Size |
101.45K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRH93130 IRH9130
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| OCR Text |
...ea
Ion LE T MeV/(mg/cm)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (m) @VGS=0V Cu Br I 43 39 32.8 -100 -100 -60 @VGS=5V -100 -100 -- VD S(V) @VGS=10V -100 -70 -- @VGS=15V -70 -50 -- @VGS=20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 ... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)
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| File Size |
118.30K /
8 Page |
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it Online |
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