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  700a Datasheet PDF File

For 700a Found Datasheets File :: 1063    Search Time::2.063ms    
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    IRF7805APBF IRF7805ATRPBF

International Rectifier
Part No. IRF7805APBF IRF7805ATRPBF
OCR Text ... recovery q rr 88 88 nc di/dt = 700a/s charge v ds = 16v, v gs = 0v, i s = 7a reverse recovery q rr(s) 55 55 charge (with parallel schotkky) parameter min typ max min typ max units conditions drain-to-source v (br)dss 30 ? ? 30 ? ? ...
Description 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
N Channel Application Specific MOSFETs

File Size 238.81K  /  8 Page

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    American Technical Ceramics, Corp.
Part No. CDR12BP751AGSS
OCR Text ...haracteristics bg bp cdr11 100a 700a cdr12 100a 700a cdr13 100b 700b cdr14 100b 700b equiv. atc part no. style characteristics bg bp cdr21 100b ------ ms 700b ------ ms cdr22 100b ------ ar 700b ------ ar cdr23 100b ------ rw 700b ------ rw...
Description CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.00075 uF, SURFACE MOUNT CHIP

File Size 137.77K  /  4 Page

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    IRGP4262DPBF IRGP4262D-EPBF

International Rectifier
Part No. IRGP4262DPBF IRGP4262D-EPBF
OCR Text ... 7.7 v v ce = v ge , i c = 700a ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -20 ? mv/c v ce = v ge , i c = 700a (25c-150c) gfe forward transconductance ? 16 ? s v ce = 50v, i c = 24a, pw = 20s i ces co...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 678.44K  /  12 Page

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    http://
International Rectifier, Corp.
Part No. IRF7811W IRF7811WTR
OCR Text ... recovery q rr 45 nc di/dt ~ 700a/s v ds = 16v, v gs = 0v, i s = 15a reverse recovery q rr(s) 41 nc di/dt = 700a/s charge (with parallel (with 10bq040) schottky) ? v ds = 16v, v gs = 0v, i s = 15a source-drain rating & characteris...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET for DC-DC Converters 功率MOSFET用于DC - DC转换

File Size 146.13K  /  6 Page

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    IRF7807VTR IRF7807V

International Rectifier
Part No. IRF7807VTR IRF7807V
OCR Text ...erse recovery charge di/dt = 700a/s , (with 10bq040) v ds = 16v, v gs = 0v, i s = 7.0a di/dt = 700a/s v ds = 16v, v gs = 0v, i s = 7.0a q rr(s) ??? 41 irf7807v www.irf.com 3 control fet special attention has been given to the po...
Description    N Channel Application Specific MOSFET
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 104.75K  /  8 Page

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    MICROSEMI
Part No. APT60S20BG APT60S20SG
OCR Text ...125 c i f = 60a, di f /dt = -700a/ s v r = 133v, t c = 125 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-t...
Description HIGH VOLTAGE SCHOTTKY DIODE

File Size 1,589.58K  /  4 Page

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    APT
Part No. APT60S20B APT60S20S
OCR Text ...125 c i f = 60a, di f /dt = -700a/ s v r = 133v, t c = 125 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-t...
Description HIGH VOLTAGE SCHOTTKY DIODE

File Size 191.40K  /  4 Page

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