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For 700-1000 Found Datasheets File :: 39848 Search Time::1.531ms
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				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	... 1 23 5 10 20 700 50 d.c. Halfwave 3 phase 120 6 phase 60 0.001 0.001 0.01 Cycles at 50Hz Duration 0.1 Time - (s) 1.0 10 Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase ...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD DYNEX[Dynex Semiconductor]
Part No.	DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text	... sine forward current - (kA) 700 Double side cooled 20 650 I2t value - (A2s x 103) 15 600 0.01 10 I2t 550 Conduction 5 500 Effective thermal resistance Junction to case C/W Double side 0.032 0.034 ...
Description	Rectifier Diode
File Size	96.08K / 7 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HA8050 HA8050S
OCR Text	.................................. 700 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 *hFE2 fT Cob ...1000 125 C o Spec. No. : HE6116 Issued Date : 1997.09.08 Revised Date : 2002.04.17 Page No. : 2/...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.62K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	HE8050S
OCR Text	.................................. 700 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 *hFE2 fT Cob ...1000 1000 Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Page No. : 2/4 ...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	37.94K / 4 Page	View it Online	Download Datasheet

				HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HMBT8050
OCR Text	.................................. 700 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob Min. 25 20 5...1000 10000 Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 2/3 ...
Description	NPN EPITAXIAL TRANSISTOR
File Size	29.39K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HPN2907A PN2907A
OCR Text	....04.15 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD (mW) 500 400 300 200 100 0 0 50 100 o 150 200 Ambient Temperatu...1000 0.0500 5 2 2 Millimeters Min. Max. 0.36 0.56 2.54 1.27 5 2 *2 Notes: 1.Dimension ...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	36.46K / 4 Page	View it Online	Download Datasheet

				HSMC CORP. HI-SINCERITY MICROELECTRONICS, CORP. HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HTIP42C HTIP42
OCR Text	...00 -100 30 15 3 Typ. Max. -400 -700 -1 -1.5 -2 75 Unit V V uA uA mA V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=...1000 hFE @ VCE=4V Spec. No. : HE6733 Issued Date : 1994.08.10 Revised Date : 2002.05.07 Page No. ...
Description	PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管
File Size	27.00K / 3 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICL3237E ICL3237ECA ICL3237ECAZ ICL3237EIA ICL3237EIAZ
OCR Text	...5 25 250 1000 1000 6 24 4 700 1700 1100 0.15 0.15 200 200 100 25 50 17 40 12 - kbps kbps kbps s s ns ns ns ns Receiver Propagation Delay Receiver Input to Receiver Output, CL = 150pF Normal Operation Normal Operation tPHL ...
Description	-15kV ESD Protected, 10nA Supply- Current, 3V to 5.5V, 250k/1Mbps, RS-232 Transmitters/Receivers
File Size	229.71K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	...for 10 seconds Max. 174 120 700 200 1.4 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ ...1000 ID, Drain-to-Source Current (A) 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	...for 10 seconds Max. 180 130 700 230 1.5 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ ...1000 ID, Drain-to-Source Current (A) 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

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