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Mitsubishi Electric Corporation
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| Part No. |
MH32S72APHB-7
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| OCR Text |
7,-8 2,415,919,104 -bit (33,554,432 - word by 72-bit)synchronous dram mitsubishi lsis ( / 55 ) mitsubishi electric 17 .mar.2000 preliminary spec. some contents are subject to change without notice. mit-ds-0380-0.1 description the m... |
| Description |
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
749.66K /
55 Page |
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it Online |
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Mitsubishi Electric Semiconductor
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| Part No. |
MH64S72AWJA-7 MH64S72AWJA-6 MH64S72AWJA-8 B00009
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| OCR Text |
7,-8
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six industry standard 32M x 4 Sy nchronous DRAMs in... |
| Description |
From old datasheet system
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
932.43K /
56 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
MH32S72APHB-7 MH32S72APHB-8 MH32S72APHB-6
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| OCR Text |
7,-8 2,415,919,104 -bit (33,554,432 - word by 72-bit)synchronous dram mitsubishi lsis ( / 55 ) mitsubishi electric 17 .mar.2000 preliminary spec. some contents are subject to change without notice. mit-ds-0380-0.1 description the m... |
| Description |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:16VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:6900uF RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:100VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:78uF RoHS Compliant: Yes
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
715.44K /
55 Page |
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it Online |
Download Datasheet |
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Cypress Semiconductor, Corp.
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| Part No. |
GVT71128E36B-7 GVT71128E36T-7
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| OCR Text |
...a features ? fast access times: 7.5 and 8 ns fast clock speed: 117 and 100 mhz provide high-performance 2-1-1-1 access rate fast oe ac...bit counter for internal burst operation. all synchronous inputs are gated by registers controlled b... |
| Description |
128K X 36 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
128K X 36 STANDARD SRAM, 7.5 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
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| File Size |
285.92K /
16 Page |
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it Online |
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Integrated Circuit Technology Corp
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| Part No. |
PEEL22CV8J-7
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| OCR Text |
7/-10/-25 cmos programmable electrically erasable logic device n n n n high speed, low power - speeds ranging from 5ns to 25ns - le...bit that prevents unauthorized reading or copying of designs programmed into the device. the securit... |
| Description |
EE PLD, 7.5 ns, PQCC28 PLASTIC, LCC-28
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| File Size |
273.66K /
8 Page |
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Mitsubishi Electric, Corp.
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| Part No. |
MH16S72BDFA-7
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| OCR Text |
7, -8 mitsubishi lsis 19 /jun/1999 mit-ds-0329-0.0 description application main memory unit for computers, microcomputer memory. pre...bit synchronous dram module. this consist of eighteen industry standard 16m x 4 synchronous ... |
| Description |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 1207959552位（16,777,21672位）同步动态随机存储器
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| File Size |
970.47K /
56 Page |
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it Online |
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