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Infineon
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| Part No. |
SKB06N60HS
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| OCR Text |
...e ordering code skb06n60hs 600v 6a 80j 150 c to-263ab q67040-s4544 maximum ratings parameter symbol value unit collector-emitter voltage v ...400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 68 w operating junction and st... |
| Description |
IGBTs & DuoPacks - 6a 600V TO263 IGBT Diode
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| File Size |
422.36K /
14 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPW12N50C3
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| OCR Text |
...everse diode dv/dt dv/dt
IS=11.6a, VDS=480V, T j=125C
A V/ns V W C
2003-06-30
Gate source voltage
VGS VGS Ptot T j , T stg
Page ...400v
pF
V DD=380V, V GS=0/10V, ID=11.6a, R G=6.8
-
ns
Gate Charge Characteristics Gat... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
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| File Size |
252.15K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KSC2335F KSC2335
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| OCR Text |
...ain Test Condition IC=3A, IB1=0.6a, L = 1mH IC=3A,IB1=-IB2=0.6a VBE(off)=-5V, L = 180H, Clamped IC=6a, IB1=2A, IB2=-0.6a VBE(off)=-5V, L = 180H, Clamped VCE=400v, IE = 0 VCE=400v, RBE = 51 @ TC = 125C VCE=400v, VBE (off) = -1.5V VCE=400v, V... |
| Description |
High Speed/ High Voltage Switching
High Speed, High Voltage Switching
NPN Epitaxial Silicon Transistor
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| File Size |
32.17K /
3 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KSC2335 KSC2335OTU KSC2335R KSC2335RTU KSC2335Y KSC2335YTU
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| OCR Text |
...Test Condition IC = 3A, IB1 = 0.6a, L = 1mH IC = 3A, IB1 = -IB2 = 0.6a VBE(off) = -5V, L = 180H, Clamped IC = 6a,IB1= 2A, IB2 = -0.6a VBE(off) = -5V, L = 180H, Clamped VCB = 400v, IE = 0 VCE = 400v, RBE= 51 @ TC=125C VCE = 400v, VBE(off)= -... |
| Description |
NPN Epitaxial Silicon Transistor
High Speed, High Voltage Switching
High Speed/ High Voltage Switching
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| File Size |
51.91K /
4 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB06N60HS
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| OCR Text |
....infineon.com/igbt/ VCE 600V IC 6a Eoff 80J Tj 150C Marking K06N60HS Package P-TO-220-3-45
P-TO-220-3-45
G
E
Type SKB06N60HS Maxim...400v, Tj 150C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time betwe... |
| Description |
High Speed IGBT in NPT-technology
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| File Size |
353.14K /
14 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
RFM12N40 RFM12N35
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| OCR Text |
... VGS = 10V, (Figures 6, 7) ID = 6a, VGS = 10V ID = 12A, VGS = 10V ID 6a, VDS = 200V, RG = 50, VGS = 10V, RL = 33, (Figures 10, 11, 12)
T...400v RFM12N40 1 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 1000
15
10
1
5 VGS = 4V 0 0 2 4 ... |
| Description |
12A, 350V and 400v, 0.500 Ohm, N-Channel Power MOSFETs
12A/ 350V and 400v/ 0.500 Ohm/ N-Channel Power MOSFETs
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| File Size |
30.97K /
4 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4481 IDB06E60 IDP06E60 Q67040-S4480 INFINEONTECHNOLOGIESAG-Q67040-S4480
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| OCR Text |
...2 -
Forward voltage drop
IF=6a, Tj=25C IF=6a, Tj=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) coppe...400v, IF=6a, di/dt=550A/s, Tj=25C V R=400v, IF=6a, di/dt=550A/s , Tj=125C V R=400v, IF=6a, di/dt=550... |
| Description |
Fast Switching EmCon Diode 快速开关快恢复二极
Silicon Power Diodes - 6a EmCon in TO220-2
Silicon Power Diodes - 6a EmCon in TO263
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| File Size |
193.98K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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