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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM1314-18F
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| OCR Text |
6.0dB(Typ.) High *E PAE: add=27%(Typ.) High *E Broad Band: 13.75~14.5GHz *E Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DES...75GHz +10j 13.75GHz 0 14.5 -10j -250j 14.125 14.125 14.5 * +250j Scale for |S 21| 180 3 2 14.5 14.12... |
| Description |
X,Ku-Band Internally Matched FET
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| File Size |
110.05K /
5 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FRM3Z232HY
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| OCR Text |
...
c Ls
c Lf (O0.8) c Ls O4.6 MAX. (5.5) 0.3 30.0 MAX. O3.00.2 O4.10.2 2-2.5 4.00.2 6.30.5 10.0 MIN.
0
2
1
P.C.D. 3.0
Connector (Note 2) O0.90.1 L (Note 2)
Note 1: c : Fiber center line Lf c Stem center line Ls: Neither... |
| Description |
InGaAs-PIN/Preamp Receiver
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| File Size |
196.70K /
4 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FRM3Z232LY
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| OCR Text |
...
c Ls
c Lf (O0.8) c Ls O4.6 MAX. (5.9) 0.3 30.0 MAX. O3.00.2 O4.10.2 0.50.1 3.50.2 6.50.5 10.0 MIN.
0
2
1
P.C.D. 3.0 2-2.5 5.40.2 (Note 3)
Connector (Note 2) O0.90.1 L (Note 2)
Note 1: c : Fiber center line Lf c Stem ... |
| Description |
InGaAs-PIN/Preamp Receiver
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| File Size |
219.63K /
4 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FRM5W232LY
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| OCR Text |
...0.2
1
10 MIN. 1.00.1 4.70.2 6.50.5
VR
VDD
1
4
2 3
Vout (+) Vout (-)
5
Case Ground
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be h... |
| Description |
InGaAs-APD/Preamp Receiver
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| File Size |
124.44K /
4 Page |
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it Online |
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HANAMICRON[HANAMICRON]
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| Part No. |
HBM2X1M
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| OCR Text |
... General
1.1 1.2 1.3 1.4 1.5 1.6 1.7 Overview Features Application Pin Configuration & Outline Device Terminal Functions Package Dimensions...75GHz 1.8GHz ~5.1GHz 5.1GHz ~5.3GHz
Min
Typ
Max -36 -30 -47 -47
Unit dBm
www.hanamicr... |
| Description |
Bluetooth V1.2 Class 2 Module
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| File Size |
208.75K /
18 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC38V5867
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| OCR Text |
6.75ghz BAND 6W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
June/2004
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| Description |
5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
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| File Size |
251.65K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC39V5867
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| OCR Text |
6.75ghz BAND 8W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
June/2004
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| Description |
5.8~6.75ghz BAND 8W INTERNALLY MATCHED GaAs FET
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| File Size |
247.55K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC42V5867 MGFC42V586712
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| OCR Text |
6.75ghz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
June/2004
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| Description |
5.8`6.75ghz BAND 16W INTERNALLY MATCHED GaAs FET 5.8~6.75ghz BAND 16W INTERNALLHY MATCHED GaAs FET
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| File Size |
248.36K /
3 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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| Part No. |
Q62702G62 CGY184
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| OCR Text |
...10,11 Pin(3)
GND1(5)
GND2(6)
GND3(17)
Pin # 1 2 3 4 5 6 7 8 9,10,11 12 13 14 15 16 (17) n. c. Vcon PIN VD1 Gnd1 Gnd2 VD2 VD3 POU...75GHz, duty cycle 10%,on =0.33ms ) t
36 34 32 30 Pout [dBm] PAE [%] 45 40 35 30
Po ut 28 [d B 26... |
| Description |
From old datasheet system GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V)
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| File Size |
139.23K /
14 Page |
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it Online |
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