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520v Datasheet PDF File

For 520v Found Datasheets File :: 368 Search Time::2.141ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FSDM0465RE FSDM0465REWDTU FSDM07652REWDTU FSDM0565RE FSDM0565REIWDTU FSDM0565REWDTU FSDM07652RE
OCR Text	...ion VDS = 650V, VGS = 0V VDS = 520v, VGS = 0V, TC = 125C VDS = 650V, VGS = 0V VDS = 520v, VGS = 0V, TC = 125C VDS = 650V, VGS = 0V VDS = 520v, VGS = 0V, TC = 125C Min. Typ. Max. Unit 250 250 500 500 500 500 2.20 2.60 2.20 1.60 pF 1.76...
Description	Green Mode Fairchild Power Switch
File Size	509.19K / 21 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB9N65APBF
OCR Text	...DS = 650V, VGS = 0V A 250 VDS = 520v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- R...
Description	SMPS MOSFET
File Size	126.85K / 8 Page	View it Online	Download Datasheet

				http://
Part No.	SSD02N65
OCR Text	...nt i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 6.3 8 v gs =10v, i d =1a total gate charge q g - 8 - nc i d =1a v ds =520v v gs =10v gate-source charge q gs - 2.56 ...
Description	2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET
File Size	1,443.51K / 4 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SSU04N65 SSU04N65-15
OCR Text	...rrent i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 2.1 2.6 ? v gs =10v, i d =2a gate resistance r g - 3.4 6.8 ? v ds =v gs =0, f=1mhz total gate charge(10v) q g - 18 - gate-source ...
Description	N-Ch Enhancement Mode Power MOSFET N-Ch Enhancement Mode Power MOSFET
File Size	416.24K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD9N52
OCR Text	520v,9a n-channel mosfet general description product summary 620v@150 i d (at v gs =10v) 9a r ds(on) (at v gs =10v) < 0.86 w 100% uis tested! 100% r g tested! symbol v ds the aod9n52 have been fabricated using an advanced hig...
Description	520v,9A N-Channel MOSFET
File Size	542.45K / 6 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SW7N65B SWF7N65B
OCR Text	...0v, v gs =0v 1 ua v ds =520v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on ...
Description	N-channel TO-220F MOSFET
File Size	463.25K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSW1N50B SSI1N50B SSW1N50BTM SSI1N50BTU
OCR Text	520v N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimi...
Description	500V N-Channel B-FET / Substitute of SSI1N50A 500V N-Channel B-FET / Substitute of SSW1N50A 520v N-Channel MOSFET
File Size	597.11K / 9 Page	View it Online	Download Datasheet

				HY ELECTRONIC CORP.
Part No.	HY2N65D
OCR Text	...gate-drain charge dynamic v ds =520v i d =2a v gs =10v nc turn-on delay time turn-on rise time ns v dd =325v i d =2a v gs =10v r g =25 w hy2n65d / hy2n65m electrical characteristics ( t c =25 test condition paramter drain-source break...
Description	650V / 2A N-Channel Enhancement Mode MOSFET
File Size	138.06K / 4 Page	View it Online	Download Datasheet

For 520v Found Datasheets File :: 368 Search Time::2.141ms
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