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Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
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| OCR Text |
...eatures are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high... |
| Description |
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
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| File Size |
95.00K /
11 Page |
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IDT[Integrated Device Technology]
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| Part No. |
IDT72201L20J IDT72201L20JB IDT72211L20J IDT72211L20JB IDT72221L20J IDT72221L20JB IDT72421L20J IDT72421L20JB IDT72241 IDT72231 IDT72211 IDT72211L12J IDT72211L12JB IDT72211L12L IDT72211L12LB IDT72211L12PF IDT72211L12PFB IDT72211L15J IDT72211L15JB IDT72211L15L IDT72211L15LB IDT72211L15PF IDT72211L15PFB IDT72211L20L IDT72211L20LB IDT72211L20PF IDT72211L20PFB IDT72211L25J IDT72211L25JB IDT72211L25L IDT72211L25LB IDT72211L25PF IDT72211L25PFB IDT72211L35J IDT72211L35JB IDT72211L35L IDT72211L35LB IDT72211L35PF IDT72211L35PFB IDT72211L50J IDT72211L50JB IDT72211L50L IDT72211L50LB IDT72211L50PF IDT72211L50PFB IDT72421L50PF IDT72421L50LB IDT72421L50L IDT72421L50JB IDT72421L35LB IDT72221L15JB IDT72221L15L IDT72221L15LB IDT72221L15PFB IDT72221 IDT72421L15PFB IDT72201L15PFB IDT72201L25JB IDT72201L25L IDT72201L25LB IDT72201L25PFB IDT72221L20L IDT72221L20LB IDT72221L20PF IDT72221L20PFB IDT72221L25JB IDT72221L25L IDT72221L25LB IDT72221L25PFB IDT72201L12PF IDT72201L12PFB IDT72201L35J IDT72201L35JB IDT72201L35L IDT72201L35LB IDT72201L35PF IDT72201L35PFB IDT72421L25JB IDT72421L25L IDT72421L25LB IDT72421L25PFB IDT72221L35J IDT72221L35JB IDT72221L35L IDT72221L35LB IDT72221L35PF IDT72221L35PFB IDT72421L35
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| OCR Text |
...rcial tCLK = 12, 15, 20, 25,35, 50ns Min. Typ. Max. -1 -10 2.4 -- -- -- -- -- -- -- 1 10 -- 0.4 80 IDT72421 IDT72201 IDT72211 Military tCLK = 20, 25,35, 50ns Min. Typ. Max. -10 -10 2.4 -- -- -- -- -- -- -- 10 10 -- 0.4 100
Symbol ILI(1) ... |
| Description |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
CMOS SyncFIFOO 64 X 9 256 x 9 512 x 9 1024 X 9 2048 X 9 and 4096 x 9
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
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| File Size |
196.46K /
19 Page |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
...GL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns
* * * * *
JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II (400mil) Single power supply of 3.3V +/- 0.3V Battery back up operation(L-version) 2CAS byte control
*
tCAC 13n... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K9S5608V0A-SSB0 K9S5608V0A
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| OCR Text |
...0s(Max.) - Serial Page Access : 50ns(Min.) *Fast Write Cycle Time - Program Time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) *Command/Address/Data Multiplexed I/O Port *Hardware Data Protection - Program/Erase Lockout During Power Transitio... |
| Description |
32M x 8Bit SmartMedia Card Data Sheet
32M x 8 Bit SmartMediaTM Card
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| File Size |
344.88K /
26 Page |
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Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KBE00F005A-D411 KBE00F005A
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| OCR Text |
...5s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transi... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,346.36K /
87 Page |
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it Online |
Download Datasheet |
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Price and Availability
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